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Analysis of chemical bond states and electrical properties from stack AlON/HfO2 gate oxides formed by a layer-by-layer technique
- Authors
- 남창우
- Issue Date
- 5-Dec-2005
- Place
- 라마다 플라자 제주 호텔
- Conference Name
- ICAMD 2005
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Nahm, Tschang Uh
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)