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Electrical Characterization of Al2O3/ HfO2 Gate Oxide about the Various Thickness of Al2O3 Deposited by Atomic Layer Deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T04:56:03Z | - |
| dc.date.available | 2021-08-04T04:56:03Z | - |
| dc.date.issued | 2005-03-29 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/73013 | - |
| dc.title | Electrical Characterization of Al2O3/ HfO2 Gate Oxide about the Various Thickness of Al2O3 Deposited by Atomic Layer Deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2005 MRS Spring Meeting | - |
| dc.citation.conferencePlace | San Francisco | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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