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The Dependency of Strained Si Inversion Layer Grown on SiGe-On-Insulator n-MOS FETs on Phonon-Limited Mobility
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-04T05:18:32Z | - |
| dc.date.available | 2021-08-04T05:18:32Z | - |
| dc.date.issued | 2005-02-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/73110 | - |
| dc.title | The Dependency of Strained Si Inversion Layer Grown on SiGe-On-Insulator n-MOS FETs on Phonon-Limited Mobility | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | Korea Seoul Coex | - |
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