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Effect of strained Si thickness on simulated electron mobility for ultra-thin strained-SGOI n-MOSFETs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-04T05:36:00Z | - |
| dc.date.available | 2021-08-04T05:36:00Z | - |
| dc.date.issued | 2004-10-21 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/73786 | - |
| dc.title | Effect of strained Si thickness on simulated electron mobility for ultra-thin strained-SGOI n-MOSFETs | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 | - |
| dc.citation.conferencePlace | 제주도 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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