Characteristics of HfOxNy Gate Dielectric Deposited by Plasma Enhanced Atomic Layer Deposition Method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2021-08-04T05:50:32Z | - |
dc.date.available | 2021-08-04T05:50:32Z | - |
dc.date.issued | 20040817 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74230 | - |
dc.title | Characteristics of HfOxNy Gate Dielectric Deposited by Plasma Enhanced Atomic Layer Deposition Method | - |
dc.type | Conference | - |
dc.citation.conferenceName | Atomic Layer Deposition 2004(ALD`04) | - |
dc.citation.conferencePlace | Helsinki, Finland | - |
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