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Room-temperature 1.35 um emission from wire-like anisotropic InGaAs quantum dots grown on just-(100) GaAs substrate by atomic layer epitaxy

Authors
김은규
Issue Date
28-Jul-2004
Publisher
International Union of Pure and Applied Physics
Citation
27th Inter. Conf. on Physics of Semiconductors
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74263
Conference Name
27th Inter. Conf. on Physics of Semiconductors
Place
Flagstaff, Arizona
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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