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Energy Levels of InAs Quantum Dots by Capacitance Transient Spectroscopy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-04T05:51:53Z | - |
| dc.date.available | 2021-08-04T05:51:53Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2004-06-29 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74321 | - |
| dc.publisher | Sichuan University | - |
| dc.title | Energy Levels of InAs Quantum Dots by Capacitance Transient Spectroscopy | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 11th Korea-China Symposium on Thin Film Materials | - |
| dc.relation.isPartOf | 11th Korea-China Symposium on Thin Film Materials | - |
| dc.citation.title | 11th Korea-China Symposium on Thin Film Materials | - |
| dc.citation.conferencePlace | Chengdu, China | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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