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Effects on energy levels of self-assembled InAs/InP quantum dots by insertion of strained layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-04T06:02:03Z | - |
| dc.date.available | 2021-08-04T06:02:03Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2004-05-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74596 | - |
| dc.publisher | 한,중,일 과학재단 | - |
| dc.title | Effects on energy levels of self-assembled InAs/InP quantum dots by insertion of strained layers | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 6th Inter. Symp. of Northeastern Asian NanoScience and Technology | - |
| dc.relation.isPartOf | 6th Inter. Symp. of Northeastern Asian NanoScience and Technology | - |
| dc.citation.title | 6th Inter. Symp. of Northeastern Asian NanoScience and Technology | - |
| dc.citation.conferencePlace | Fudan Univ., Shanghai | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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