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Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy

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dc.contributor.author김은규-
dc.date.accessioned2021-08-04T06:03:18Z-
dc.date.available2021-08-04T06:03:18Z-
dc.date.created2021-06-30-
dc.date.issued2004-03-16-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74683-
dc.publisherOrganizing Committee of ISBLLED 2004-
dc.titleElectrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation5th Inter. Symp. on Blue Laser and Light Emitting Diodes-
dc.relation.isPartOf5th Inter. Symp. on Blue Laser and Light Emitting Diodes-
dc.citation.title5th Inter. Symp. on Blue Laser and Light Emitting Diodes-
dc.citation.conferencePlaceGyeongju, Korea-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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