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Annealing Effects on the Microstructural Properties of InAs Quantum Dots Grown on GaAs Buffer Layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-04T06:03:21Z | - |
| dc.date.available | 2021-08-04T06:03:21Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2004-03-15 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74686 | - |
| dc.publisher | Semiconductor Physics Division - The Korean Physical Society | - |
| dc.title | Annealing Effects on the Microstructural Properties of InAs Quantum Dots Grown on GaAs Buffer Layers | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 12th Seoul International Symposium on the Physics of Semiconductors and Applications-2004 | - |
| dc.relation.isPartOf | The 12th Seoul International Symposium on the Physics of Semiconductors and Applications-2004 | - |
| dc.citation.title | The 12th Seoul International Symposium on the Physics of Semiconductors and Applications-2004 | - |
| dc.citation.conferencePlace | Hotel Hyundai, Gyeongju, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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