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Effects of Al2O3 layer thickness in Al2O3/HfO2 gate oxide deposited by Atomic Layer Deposition Method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T06:21:43Z | - |
| dc.date.available | 2021-08-04T06:21:43Z | - |
| dc.date.issued | 20040413 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/75128 | - |
| dc.title | Effects of Al2O3 layer thickness in Al2O3/HfO2 gate oxide deposited by Atomic Layer Deposition Method | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2004 MRS Spring Meeting | - |
| dc.citation.conferencePlace | San Francisco,CA. USA | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)