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STRAINED Si를 만들기 위한 SiGe LAYER 형성에 TEMPERATURE,GeH4GAS PRE-FLOW,GAS RATIO가 미치는 영향
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-04T06:34:50Z | - |
| dc.date.available | 2021-08-04T06:34:50Z | - |
| dc.date.issued | 2003-11-21 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/75495 | - |
| dc.title | STRAINED Si를 만들기 위한 SiGe LAYER 형성에 TEMPERATURE,GeH4GAS PRE-FLOW,GAS RATIO가 미치는 영향 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2003한국재료학회 추계 학술발표대회 및 제1회 화합물반도체 심포지엄 논문 개요집 | - |
| dc.citation.conferencePlace | 연세대학교 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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