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Effect of temperature, GeH4 gas pre-flow, gas ratio on formation of SiGe layer for strained Si
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-04T06:34:51Z | - |
| dc.date.available | 2021-08-04T06:34:51Z | - |
| dc.date.issued | 2003-11-21 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/75496 | - |
| dc.description.abstract | Effect of temperature, GeH4 gas pre-flow, gas ratio on formation of SiGe layer for strained Si | - |
| dc.title | Effect of temperature, GeH4 gas pre-flow, gas ratio on formation of SiGe layer for strained Si | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 03년도 한국재료학회 추계학술대회 및 제1회 화합물반도체 심포지엄 논문개요집 | - |
| dc.citation.conferencePlace | 연세대학교(KOREA) | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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