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Characteristics of ZrO2/Al2O3 films for gate dielectric applications deposited by atomic deposition method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T06:37:05Z | - |
| dc.date.available | 2021-08-04T06:37:05Z | - |
| dc.date.issued | 2003-11-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/75653 | - |
| dc.title | Characteristics of ZrO2/Al2O3 films for gate dielectric applications deposited by atomic deposition method | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Material | - |
| dc.citation.conferencePlace | Jeju Island, Korea | - |
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