A study on the etching characteristics of Er doped optical waveguide films using Inductively Coupled Plasma EtchingA study on the etching characteristics of Er doped optical waveguide films using Inductively Coupled Plasma EtchingA study on the etching characteristics of Er doped optical waveguide films using Inductively Coupled Plasma EtchingA study on the etching characteristics of Er doped optical waveguide films using Inductively Coupled Plasma EtchingA study on the etching characteristics of Er doped optical waveguide films using Inductively Coupled Plasma EtchingA study on the etching characteristics of Er doped optical waveguide films using Inductively Coupled Plasma Etching

Abstract

Waveguide type Er doped optical amplifier is an integrated optic device, and it is applicable to access network in optical communication. Because of its compact physical size, easy mass-production, and integratibility into monolithic multi-functional optical devices, this device is expected to be a key element for optical communication network in the next generation. In this research, Si/SiO2 optical waveguide films were fabricated by FHD(Flame Hydrolysis Deposition), and Er3+ was doped by solution doping method. The optical waveguide was formed using ICP(Inductively Coupled Plasma) on high density plasma. During etching process, etch characteristics were observed by changing such etch parameter as source power, bias voltage, gas flow rate, working pressure. Etch rate, etch profile and surface roughness by surface profiler, XPS and SEM were measured to find optimal etch condition