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Characteristics of HfO2 Gate dielectric deposited by remote plasma enhanced atomic layer deposition method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T07:22:54Z | - |
| dc.date.available | 2021-08-04T07:22:54Z | - |
| dc.date.issued | 2003-04-22 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/76718 | - |
| dc.title | Characteristics of HfO2 Gate dielectric deposited by remote plasma enhanced atomic layer deposition method | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2003 MRS Spring Meeting | - |
| dc.citation.conferencePlace | San Francisco Marriott & Argnet Hotel | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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