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Barrier Characteristics of TaN films deposited by remote plasma enhanced atomic layer deposition(ALD) method using metal organic precursor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T07:22:55Z | - |
| dc.date.available | 2021-08-04T07:22:55Z | - |
| dc.date.issued | 20030422 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/76719 | - |
| dc.title | Barrier Characteristics of TaN films deposited by remote plasma enhanced atomic layer deposition(ALD) method using metal organic precursor | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2003 MRS Spring Meeting | - |
| dc.citation.conferencePlace | San Francisco Marriott & Argnet Hotel | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)