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Characteristics of HFO2/AL2O3 film for gate dielectric applications deposited by atomic layer deposition method
- Authors
- 전형탁
- Issue Date
- 20030312
- Place
- Hynyang University. Seoul. Korea
- Conference Name
- The 4th International Symposium on Inorganic Materials
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)