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Electrical Characteristics of Ir/Atomic Layer Deposited ZrO2/Si field effect transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T07:35:12Z | - |
| dc.date.available | 2021-08-04T07:35:12Z | - |
| dc.date.issued | 2002-12-02 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77025 | - |
| dc.title | Electrical Characteristics of Ir/Atomic Layer Deposited ZrO2/Si field effect transistors | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2002 MRS Fall meeting | - |
| dc.citation.conferencePlace | Hynes Convention Center & Sheraton Boston Hotel and Towers , Boston Massachusetts | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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