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Influence of intentionally strained sapphire substrate on GaN epilayers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-04T07:38:15Z | - |
| dc.date.available | 2021-08-04T07:38:15Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2002-11-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77239 | - |
| dc.description.abstract | The structural and optical properties of GaN epilayers grown on intentionally strained sapphore(0001) substrates were investigated. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl+ and As+ ions to 10^15 /cm dose. | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Influence of intentionally strained sapphire substrate on GaN epilayers | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 2002 Inter. Microprocesses and Nanotechnology Conf. | - |
| dc.relation.isPartOf | 2002 Inter. Microprocesses and Nanotechnology Conf. | - |
| dc.citation.title | 2002 Inter. Microprocesses and Nanotechnology Conf. | - |
| dc.citation.conferencePlace | Tokyo, Japan | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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