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IMT-2000 기지국용 3단 저잡음 증폭기 설계

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dc.contributor.author최재훈-
dc.date.accessioned2021-08-04T07:52:47Z-
dc.date.available2021-08-04T07:52:47Z-
dc.date.created2021-06-30-
dc.date.issued2002-10-12-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77684-
dc.description.abstractIn this paper, a 3-stage low noise amplifier for IMT-2000 base-station was designed by using pHEMT ATF-54143 of HP Agilent. substrate matrial used to form matching circuit has relative permittivity(er) of 2.52(Teflon). The 3-stage LNA shows NF (Noise Figure) < 0.8dB, gain 40±0.5dB, ouput VSWR < 1.2 and OIP3 30.8dBm in 1.92~1.98GHz frequency band.-
dc.publisher한국전자파학회 충청지부-
dc.titleIMT-2000 기지국용 3단 저잡음 증폭기 설계-
dc.typeConference-
dc.contributor.affiliatedAuthor최재훈-
dc.identifier.bibliographicCitation2002년도 추계 전파 및 광파기슬 학술대회-
dc.relation.isPartOf2002년도 추계 전파 및 광파기슬 학술대회-
dc.citation.title2002년도 추계 전파 및 광파기슬 학술대회-
dc.citation.conferencePlace충북대학교-
dc.type.rimsCONF-
dc.description.journalClass2-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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