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Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-04T07:53:26Z | - |
| dc.date.available | 2021-08-04T07:53:26Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2002-10-03 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77729 | - |
| dc.publisher | University of Tokyo | - |
| dc.title | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 2nd Inter. Conf. on Semiconductor Quantum Dots (QD2002) | - |
| dc.relation.isPartOf | 2nd Inter. Conf. on Semiconductor Quantum Dots (QD2002) | - |
| dc.citation.title | 2nd Inter. Conf. on Semiconductor Quantum Dots (QD2002) | - |
| dc.citation.conferencePlace | Univ. of Tokyo, Japan | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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