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Study of the Characteristics of TiN Film Deposited by ALD Method with MO Source and NH₃
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김영도 | - |
| dc.date.accessioned | 2021-08-04T07:54:40Z | - |
| dc.date.available | 2021-08-04T07:54:40Z | - |
| dc.date.issued | 2002-08-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77816 | - |
| dc.description.abstract | Tin thin films were grown by MOALD using TDMAT and NH3.Amorphous TiN films deposited at 200,in spite of its carbon contents,have relative low resistivity values because of dense film and almost 1:1 stoichiometry of Ti and N.Resistivity of TiN films decreases with sufficient reactant gas and purge gas flow rates. Growth rates of MOALD TiN films at 180 and 200 were 0.5 and 0.6nm /cycle respectively. Because growth rate by MOALD using TDMAT and NH3 are several tens times that by ALD using TiCl4 and NH3,relative fast growth rate of MOALD can complement slow growth rate of ALD | - |
| dc.title | Study of the Characteristics of TiN Film Deposited by ALD Method with MO Source and NH₃ | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Joint Symposium on Eledtronic Materials | - |
| dc.citation.conferencePlace | Fukuoka,Japan | - |
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