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Comparison of TiN Thin film Deposited by Metal Organic Atomic Layer Deposition using TDMAT and TDEAT
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김영도 | - |
| dc.date.accessioned | 2021-08-04T07:54:42Z | - |
| dc.date.available | 2021-08-04T07:54:42Z | - |
| dc.date.issued | 2002-08-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77818 | - |
| dc.description.abstract | TiN films were successfully grown by MOALD using TDMAT,TDEAT and NH3. TiN films have relative low resistivity values because of dense film and almost 1:1 stoichiometry of Ti and N in spite of high carbon and oxygen concentration. TiN films using TDMAT and NH3 have the processing temperature between 275 and 300. The growth rate of TiN films using TDMAT and NH3. TiN films using TDMAT and TDEAT and NH3 compared to TiN films using TDEAT and NH3 were shown to higher resistivity.TiN films using TDMAT and NH3 compared to TiN films using to TiN films using TDEAT and NH3 were shown to higher resistivity. | - |
| dc.title | Comparison of TiN Thin film Deposited by Metal Organic Atomic Layer Deposition using TDMAT and TDEAT | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Joint Symposium on Electronic materials | - |
| dc.citation.conferencePlace | Fukuoka,Japan | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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