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Magnetic tunnel junction prepared by combined natural and remote oxidation methods for the application of magnetic random access memory

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dc.contributor.author김은규-
dc.date.accessioned2021-08-04T07:55:04Z-
dc.date.available2021-08-04T07:55:04Z-
dc.date.created2021-06-30-
dc.date.issued2002-08-20-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77843-
dc.publisherKorean Physical Society-
dc.titleMagnetic tunnel junction prepared by combined natural and remote oxidation methods for the application of magnetic random access memory-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation11th Seoul Inter. Symp. on Phys. of Semicond. & Appl.(ISPSA)-2002-
dc.relation.isPartOf11th Seoul Inter. Symp. on Phys. of Semicond. & Appl.(ISPSA)-2002-
dc.citation.title11th Seoul Inter. Symp. on Phys. of Semicond. & Appl.(ISPSA)-2002-
dc.citation.conferencePlaceCheju, Korea-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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