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Single electron tunneling effects in a highly doped n+ GaAs quantum dot
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-04T08:02:42Z | - |
| dc.date.available | 2021-08-04T08:02:42Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2002-08-02 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77879 | - |
| dc.publisher | Institute of Physics | - |
| dc.title | Single electron tunneling effects in a highly doped n+ GaAs quantum dot | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 26th Inter. Conf. on Phys. of Semicond.(ICPS-2002) | - |
| dc.relation.isPartOf | 26th Inter. Conf. on Phys. of Semicond.(ICPS-2002) | - |
| dc.citation.title | 26th Inter. Conf. on Phys. of Semicond.(ICPS-2002) | - |
| dc.citation.conferencePlace | Edinburg, U.K. | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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