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Atomic Layer Deposition (ALD) of high-k gate oxide

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dc.contributor.author전형탁-
dc.date.accessioned2021-08-04T08:23:00Z-
dc.date.available2021-08-04T08:23:00Z-
dc.date.issued2002-04-26-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/78335-
dc.titleAtomic Layer Deposition (ALD) of high-k gate oxide-
dc.typeConference-
dc.citation.conferenceName2002 춘계 금속학회 학술대회-
dc.citation.conferencePlace창원대학교-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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