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화학적 산화막에 의한 Si(100)와 Si(111)기판위에서의 CoSi2정합 성장

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dc.contributor.author전형탁-
dc.date.accessioned2021-08-04T10:51:26Z-
dc.date.available2021-08-04T10:51:26Z-
dc.date.issued19980501-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/82336-
dc.title화학적 산화막에 의한 Si(100)와 Si(111)기판위에서의 CoSi2정합 성장-
dc.typeConference-
dc.citation.conferenceName한국재료학회 춘계 학술대회-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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