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Effect of MgO RF Power Sputtering on Time Dependent Dielectric Breakdown(TDDB), R-V curve Characteristics for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-02T08:32:12Z | - |
| dc.date.available | 2021-08-02T08:32:12Z | - |
| dc.date.issued | 2020-07-13 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/8765 | - |
| dc.title | Effect of MgO RF Power Sputtering on Time Dependent Dielectric Breakdown(TDDB), R-V curve Characteristics for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2020 KPS spring meeting | - |
| dc.citation.conferencePlace | On-line | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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