ScholarWorks@Hanyang University: Jeon, Hyeongtag

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Jeon, Hyeongtag (전형탁)

COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)

Research Area: 반도체재료, 정보전자재료

Tel 02-2220-0387
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Atomic layer deposition:26||atomic layer deposition:18||ALD:12||ZnO:8||Al2O3:6||ZrO2:5||HfO2:5||RPALD:4||TaOx:4||tin disulfide:4||SnO2:4||Transparent conducting oxide:4||remote plasma atomic layer deposition:4||Electrical properties:3||thermal stability:3||interfacial layer:3||thin films:3||2D materials:3||2D material:3||MIM capacitor:3||Annealing:3||Photochemical metalorganic deposition:3||RRAM:3||annealing:3||highk dielectrics:2||spin coating:2||Multilayer:2||Thin film:2||SnO2 film:2||ZnS:2||IGZO:2||Metal organic precursor:2||thin film transistors:2||aluminum oxide:2||Ti capping layer:2||Diffusion barrier:2||low leakage current:2||TiO2 thin film:2||titanium dioxide:2||band structure:2||toluene:2||Microwave irradiation:2||Atomic layer deposition (ALD):2||Tin monosulfide:2||buffer layer:2||Tin oxide:2||Solar cell:2||Au:2||chloroform:2||Resistive switching:2||PVP:2||Cobalt:2||organic thin film transistor:2||step coverage:2||pentacene:2||phase transition:2||TEM:2||CCTBA:2||Highk:2||Semiconductors:2||CMOS:2||electrical properties:2||WVTR:2||Xray diffraction:2||Xray photoelectron spectra:2||postsilicidation annealing:2||electronic structure:2||field effect transistor:2||XRD:2||rapid thermal annealing:2||Thermal evaporation:2||remote plasma:2||Thickness:2||hafnium compounds:2||hall effect measurement:2||Ag nanoparticles:2||highk:2||Highk material:1||Highk oxide:1||Highkappa dielectrics:1||Hydrogen annealing:1||Hydrothermal growth:1||Interface:1||Internal photoemission spectroscopy:1||LSPR:1||La2O3:1||Laminated films:1||Leakage current:1||Low resistivity:1||Lowdielectric constant:1||Lowk dielectric:1||Luminance:1||Luminescent mechanism:1||Magnetic materials:1||Manganese:1||Medium energy ion scattering:1||Memory device diffusion barrier film:1||Metal insulator transition:1||Metalorganic chemical vapor deposition (MOCVD):1||Metals:1||Mobility:1||Multipatterning:1||Multiwall carbon nanotube:1||Multiwall carbon nanotubes:1||N2O:1||NH3 plasma:1||NO2 gas:1||Nanostructure:1||Nanocrystalline diamond film:1||Nanomaterials:1||Nanoparticles:1||Nanorod:1||Nanostructures:1||Nanowire:1||Nanowires:1||Ni:1||Ni(PriDAD)(2):1||Nickel:1||Nickel silicide:1||Nitrides:1||Nonlinear:1||Nucleation:1||O2 plasma:1||O2 plasma posttreatment:1||O2 plasma treatment:1||OLED:1||Octamethylcyclotetrasiloxane:1||Optical properties:1||OrganicInorganic Thin Film Transistor (OITFT):1||Organicinorganic field effect transistor:1||Organicinorganic thin film transistor:1||Oxide Semiconductor:1||Oxide Solar Cells:1||Oxides:1||Oxygen radical:1||Oxygen vacancy kappa:1||Ozone:1||P3HT:1||PCBM:1||PEALD:1||PVK:1||PVP (poly4vinylphenol) insulators:1||Phase transition:1||Phosphorescence:1||Photochemical reaction:1||Photoresistfree:1||Plasma power:1||Plasmaenhanced atomic layer deposition:1||Polymer light emitting diode (PLED):1||Positive Bias Temperature Stability (PBTS):1||Post annealing treatment:1||Power conversion efficiency:1||Pt nanoparticles:1||RTA:1||Rareearth phosphor:1||Remote PEALD:1||Remote Plasma:1||Remote Plasma ALD:1||Remote plasma:1||Remote plasma atomic layer deposition:1||Remote plasma enhanced atomic layer deposition(PEALD):1||Room Temperature Al2O3:1||SBT:1||SOI:1||Schottky barrier height:1||Seed layer:1||Selection device:1||SelfForming Barrier:1||Selfforming barrier:1||Selflimiting:1||Sensing mechanism:1||SiNx thin films:1||SiO2:1||SiO2 buffer layer:1||Silicon oxycarbide:1||Simulation:1||SnO2 thin film:1||SnS:1||SnS thin film:1||SnS2:1||SnSx:1||Sneakpath current:1||Solgel:1||Solgel processes:1||Spatial ALD.:1||Sputtering:1||Supercycle method:1||Surface reaction:1||Surface treatment:1||TCO:1||TDMASn:1||TEMAH:1||TFE:1||TFTs:1||TMA:1||Ta:1||TaOn:1||Tantalum:1||Terahertz nonlinearity:1||Thermal stability:1||Thin Film:1||Thin Film Transistor:1||Thin Film Transistors (TFTs):1||Thin film crystallinity:1||Thin film encapsulation:1||Thin film growth:1||Thin film transistor:1||Thin films:1||TiAlBN:1||Tin Oxide:1||Tin dioxide:1||Tin disulfide:1||Tin oxysulfide:1||Tin sulfide:1||Tin sulfide thin film:1||Titanium dioxide:1||Titanium nitride:1||Titanium oxide:1||Transfer characteristics:1||Transparent conductive oxide:1||Transparent semiconductor oxide:1||Treatment:1||UV irradiation:1||UV treatment:1||Vacuum annealing:1||Vanadium:1||Vanadium dioxide:1||WNC thin films:1||Xray photoelectron spectroscopy:1||XANES:1||Y2O3:1||Zinc oxide:1||Zinc oxysulfide:1||Zirconia:1||ZnAl2O4:1||ZnAlO:1||ZnO semiconductors:1||ZnO/Cu2O Solar Cells:1||ZnS active layer:1||aIGZO:1||accelerated temperature and humidity test:1||aluminum doping:1||anatase:1||angstrom gap:1||annealing process:1||bifacial solar cells:1||bilayer:1||blue color:1||bonds (chemical):1||carrier concentration:1||chemical interdiffusion:1||chemical oxide:1||co silicide:1||cobalt:1||cobalt disilicide:1||cobalt silicide:1||colortunable solar cells:1||composition:1||conductive filaments:1||contacts:1||crystal structure:1||defect:1||deposition methods:1||dielectrics  highk:1||diffusion:1||diffusion barrier:1||electrochemical metallization memory:1||electron beam deposition:1||electron temperature:1||electronic band structure:1||energy transfer:1||film crystallinity:1||gate oxide:1||gate spacers:1||grain size:1||graphene:1||haze:1||high dielectric constant:1||high luminance:1||highk dielectric thin films:1||highk thin film:1||highly crystalline thin film:1||hostdopant system:1||hydrogen sulfide:1||hydrothermal growth:1||interface control:1||interfaces:1||ionsurface impact:1||lanthanum compounds:1||large area:1||leakage current:1||low temperature annealing process:1||low temperature heat treatment:1||luminance:1||metal electrode:1||metal organic chemical vapor deposition:1||metal organic chemical vapor deposition (MOCVD):1||metalinsulatormetal tunneling:1||metalinsulatormetal:1||multilayers:1||nanocomposite:1||nanorod:1||nanosheet:1||nanostructured materials:1||nickel (germano)silicide:1||nickel silicide:1||nitrogen:1||nonionic surfactant:1||oxygen vacancy:1||passivation:1||perovskite solar cells:1||phosphorescence:1||photochemical metalorganic deposition:1||photocurrent:1||plasma:1||plasma CVD:1||plasma power:1||plasmaenhanced atomic layer deposition:1||platinum:1||polyvinylcarbazole:1||polymer lightemitting diode:1||postetch:1||posttransition metal dichalcogenides:1||precursor:1||precursors:1||quantum plasmonics:1||quantum tunneling:1||randomaccess storage:1||remote PEALD:1||remote plasma ALD:1||residual offstate conductance:1||resistive switching:1||roughness:1||ruthenium films:1||rutile structure titanium dioxide thin film:1||seed layer:1||silicon nitride thin film:1||silicon nitrides:1||solgel process:1||strained silicon:1||stripper:1||supercycle ALD:1||surface chemistry:1||surface treatment:1||terahertz nanoslot antenna:1||terahertz nonlinearity:1||thermal treatment:1||thin film:1||thinfilm transistors:1||tin dioxide:1||tin dioxide seed layer:1||tin disulphide:1||tin monosulfide:1||tin sulfide:1||tin sulfides:1||titanium nitride:1||transmission electron microscopy:1||transparent conducting oxide:1||transparent conducting oxides:1||tris(2phenylpyridine) iridium(III) [Ir(ppy)(3)]:1||tunnelling:1||two dimensional materials:1||twodimensional materials:1||ultralow electron temperature plasma:1||various doping positions:1||via hole:1||wafer polishing:1||work function layer:1||yttrium silicate:1||zinc doping process:1||zirconium nitride (ZrN):1||AL(2)O(3):1||ARXPS:1||Al doped ZnO:1||Al2O3/HfO2:1||Al2O3/ZrO2:1||Alternating deposition:1||Amorphous materials:1||Anionmixed ptype semiconductor:1||Annealing Effect:1||Atomic Layer Deposition:1||Au Plasmon Nanoparticle:1||Au nanoparticles:1||Auger electron spectroscopy:1||BOE solution:1||Band structure:1||Barrier films:1||Buffer layer:1||Bulk heterojunction:1||CBRAM:1||CCTBA precursor:1||Carrier concentration:1||Cathode temperature:1||CdSe nanocrystals:1||Chemical synthesis:1||Co:1||Co2(CO)(8):1||CoSi2:1||Composites:1||Conduction band offset (CBO):1||Conductive filament:1||Copper Interconnect:1||Copper diffusion barrier:1||Copper interconnect:1||CoreShell:1||CpCo(CO)(2):1||Crosslinked Poly4vinylphenol:1||Crystallinity:1||Cu interconnect:1||CuV alloy:1||Current compliance:1||DMAJ:1||DRAM:1||DRAM capacitor:1||Dielectrics:1||Direct current plasma assisted CVD:1||Direct patterning:1||Direct plating:1||Directpatterning:1||Dynamic random access memory:1||EOT:1||Electrical and optical properties:1||Electrical characteristics:1||Electronic Band Analysis:1||Encapsulation:1||Field effect mobility:1||Field effect transistor:1||Filed effect mobility:1||Flatband Voltage:1||Flexible Polymer Light Emitting Diode:1||Flexible organic solar cell:1||Flexible polyether sulfone (PES):1||Ga doped ZnO:1||Gadolinium compounds:1||Gas sensing mechanism:1||Gas sensor:1||Gate Dielectric:1||Gd2O3:Eu3+:1||GeSi alloys:1||H content:1||HEC:1||HafniumTin Oxide (HTO):1||HafniumZincTin Oxide (HZTO):1||Halleffect measurement:1||Hardness:1||Hf metal:1||HfN:1||

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