ScholarWorks@Hanyang University: Hong, Jin Pyo

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Hong, Jin Pyo (홍진표)

COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)

Research Area: 응집/반도체/응용물리

Tel 02-2220-0911
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Resistive switching:9||ReRAM:8||Nonvolatile memory:6||ZnO:5||Sputtering:4||nonvolatile memory:3||nanoparticles:3||Photoluminescence:3||nonvolatile memory:3||Thin film:2||CoFeB/MgO:2||XMCD:2||resistive switching:2||TiO2:2||Oxygen vacancy:2||Annealing stability:2||skyrmions:2||Magnetic tunnel junction:2||ZnO Nanowires:2||Copper sulfide:2||electronic structure:2||Perpendicular Magnetic Anisotropy:2||Triboelectric nanogenerators:2||HfO2:2||B diffusion:2||Selfpowered:2||Textile substrate:2||Cu stacked layer:1||CuS electrodes:1||CuSCN hole transport layer:1||CurrentVoltage Measurements:1||Deeper acceptor:1||Domain wall scattering:1||Double active layer:1||Double magnetic tunnel junctions:1||Double pancake coil:1||Drive level capacitance profiling:1||Electrical properties:1||Electrochemical performance:1||Electrochemical supercapacitor:1||Electrode interface:1||Energy harvesting:1||Energy storage materials:1||Energy storage system:1||Exchange bias:1||Extrusion:1||Fabrics/textiles:1||Fe3O4 thin films:1||Ferromagnet:1||Flexible supercapacitors:1||Ge condensation:1||Graphene:1||Graphene oxide:1||HTS field coil:1||Heteroatom transition metal chalcogenide:1||Heusler material:1||Hexagonal BN:1||Hierarchical heterostructure:1||Hierarchical nanostructure:1||Homojunction:1||Homojunction:1||Hybrid Nanogenerator:1||Hybrid structure:1||Hydrogen doping:1||Hydrothermal Process:1||IGZO:1||IGZO TFT:1||IGZO TFTs:1||Interface anisotropy:1||Interface perpendicular magnetic anisotropy:1||Interfacial property:1||Inversion behavior:1||Kr gas:1||LDA Topic Modeling:1||Ligand engineering:1||Lithium:1||LithiumDopant:1||MIM:1||MIS structures:1||MOS:1||MOSFET:1||MRAM:1||Magnetic properties:1||Magnetic random access memory:1||Magnetic thin films:1||Manganese oxide nanoflake:1||Metaloxidesemiconductor:1||Metaverse:1||MgO:1||Mica:1||MoS2 monolayers:1||Multilayers:1||NH3:1||Nadopant:1||Nanagenerator:1||Nano floating gate memory:1||Nanoparticle:1||Nanoparticles:1||Nanostructured materials:1||Nanowires:1||NiCu fabric substrate:1||Nonlattice oxygen:1||Nonvolatile memory:1||Orbital Magnetic Moments:1||Organicinorganic coating:1||Oxide TFT:1||Oxygen Bonding:1||P(VDFTrFECTFE):1||PL:1||PMA (Perpendicular Magnetic Anisotropy):1||Perovskite solar cell:1||Perpendicular magnetic anisotropy:1||Perpendicular magnetic anisotropy (PMA):1||Photovoltaic:1||Photovoltaics:1||Piezoelectricity:1||Pt Thickness:1||ReRAM:1||Redox reaction:1||Research Trend:1||Resistive randomaccess memory:1||Rotating cryogenic cooling system:1||Silicide nanoparticles:1||Silver bismuth sulfide:1||Solar cell:1||Solution immersion synthesis:1||Solution process:1||Supercapacitor:1||Surface functionalization:1||Surface interfaceengineering:1||Surface passivation:1||Synchronous motor:1||Ta diffusion:1||Ta thickness:1||Temperature dependence:1||Textile based:1||Thin film solar cells:1||Time Series Regression:1||Titanium dioxide:1||Titanium oxide:1||Transition metal sulfide:1||Trap analysis:1||Tribo positive material:1||Triboelectric effect:1||Triboelectric nanogenerator:1||Triboelectricity:1||Tubular shellcoreshell:1||Tungsten oxide:1||Turbidity point:1||Twostep Plasma treatment:1||UV Laser:1||Virtual World:1||XAS:1||XPS:1||Zinc Oxide:1||Zinc sulfide:1||Zn metal anode:1||ZnO Nanostructure:1||ZnO Seed Layer:1||ZnO nanowire:1||ZnO nanowires:1||[Co/Pd] multilayers:1||[Co/Pt](n) Medium:1||adder:1||alphaC:Ox active layer:1||aluminium:1||aluminium compounds:1||annealing:1||asymmetric supercapacitor:1||atomic layer deposition:1||bandgap:1||carbon conductive ink:1||carbon nanotubes:1||charge plasma:1||conductive yarns:1||contact engineering:1||controlled aspect ratio:1||dc plasma etching:1||diffusion:1||electrochemical reaction kinetics:1||electrode dopants:1||electronhole recombination:1||electrostatic force microscopy:1||energy storage material:1||excess methylammonium iodide:1||exciton stability:1||ferroelectric phase:1||ferroelectric polymers:1||field emission:1||formingfree response:1||gate dielectric:1||gate oxide:1||growth:1||hafnium compounds:1||half:1||hierarchical nanostructures:1||high dielectric permittivity:1||highk:1||hightemperature effects:1||impurity scattering:1||interface states:1||lithium:1||magnesium compounds:1||magnetic devices:1||magnetic domain:1||magnetic field effect:1||magnetic hysterisis:1||magnetic impurities:1||magnetic materials:1||magnetic tunnelling:1||magnetoresistance:1||meltingfree:1||memory devices:1||metal nanoparticles:1||nanoflake:1||nanowire architecture:1||nanowires:1||nitride:1||offaxis reactive sputtering:1||offaxis sputtering:1||ohmic contacts:1||organic lightemitting diodes:1||oxygen ion movement:1||oxynitride amorphous carbon layer:1||pType Characteristics:1||pType ZnO:1||ptype:1||ptype characteristics:1||paraelectric phase:1||perovskite solar cells:1||perpendicular magnetic anisotropy,광흡수분광법, 자기원편광이색성, 수직자기이방성, [Co/Pd] 다층박막, 전자구조:1||phase transition:1||phasechange materials:1||pyridinicnitrogen bonds:1||pyrrolicnitrogen bonds:1||resistance random access memory:1||resistance switching property:1||rf sputtering:1||ruthenium:1||selfpowered:1||semimetallic electrodes:1||silvaco atlas:1||skyrmion Hall effect:1||solvent annealing:1||soreteffect:1||sp 2 bond conductive filaments:1||sp(2) bond conductive filaments:1||stretchable triboelectric nanogenerators:1||subtractor:1||surface modifications:1||surfaceembossed frames:1||tantalum oxide:1||tape activation:1||temperature measurement:1||thermal CVD:1||thermalization energy:1||thermally activated delayed fluorescence:1||thin film:1||thin film transistors:1||transmission electron microscopy:1||triboelectric nanogenerator:1||triboelectric nanogenerators:1||tunnel fieldeffect transistor:1||tunnel magnetoresistance:1||tunneling:1||tunnelling:1||tunnelling magnetoresistance:1||wearable electronics:1||woven textiles:1||가상세계:1||메타버스:1||시계열 회귀분석:1||연구동향:1||1D poly[styrenebisoprenebstyrene] tube:1||토픽 모델링:1||1MW class:1||Aircore stator:1||Aluminiumnitride codoped:1||Amorphous materials:1||Anti solvent treatment:1||Aqueous zinc ion battery:1||Asymmetric supercapacitor:1||Auger electron spectroscopy:1||Bipolar resistive switches:1||Bipolar switching:1||Buffer layer:1||CIZO TFT:1||CRS:1||Capacitancevoltage:1||Carbon nanotubes:1||CeO2:1||Ceramic materials:1||Codoped TiO2:1||Cosputtering:1||Co2FeAl0.5Si0.5:1||CoOx:1||CoPt:1||Colloidal nanocrystals:1||Complementary resistive switching:1||Copper zinc tin sulfide:1||Crystal structure:1||

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