ScholarWorks@Hanyang University: Ahn, Jinho

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Ahn, Jinho (안진호)

COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)

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Tel 02-2220-0407
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EUVL:9||atomic layer deposition:7||HfO2:6||EUV pellicle:6||EUV:6||EUV lithography:4||extreme ultraviolet lithography:4||Atomic layer deposition:4||Mask:4||sputtering:4||optical properties:4||computer simulation:4||Lithography:3||Phase Shift Mask:3||phase shift mask:3||EUV Lithography:3||pellicle:3||Coreshell:3||CSM:3||emissivity:3||Reflectivity:3||resistance switching effect:2||ALD:2||binary metal oxide:2||ruthenium:2||semiconductor:2||imaging performance:2||buffer:2||silicon:2||Mask CD:2||silicon nitride:2||ceramics:2||lithography simulation:2||Nanoparticle:2||chemical vapour deposition:2||mask:2||Transmittance:2||coherent scattering microscopy (CSM):2||membrane:2||tantalum compounds:2||thin film:2||metal electrode:2||Electroforming:2||PEALD:2||PSM:2||ultraviolet lithography:2||Carbon contamination:2||deposition:2||Resistive switching:2||molybdenum:2||:2||capping:2||Mask blanks:2||doping:2||electron beam lithography:2||p>:2||Photoluminescence:2||Photonic crystal:2||Conducting filament:2||phase shifting masks:2||Shadowing effect:2||Photoresist:2||gate dielectric:2||SiO2:2||graphene:2||/p>:2||EUV transmittance:2||Imaging Performance:2||process window:2||ptychography:2||<:2||image contrast:2||Extreme ultraviolet lithography:1||Extreme ultraviolet lithography (EUVL) mask:1||FeNi alloy:1||Fiducial mark:1||Footprint:1||Gband intensity:1||Ge2Sb2Te5:1||HV CD bias:1||HV overlapping PW:1||Hardening:1||Hardness:1||Hazardous Gas Sensor:1||Haze:1||Heat treatment:1||Hf0:1||High NA:1||Highk Material:1||Highk material:1||Hydrogen annealing:1||Hydrogen bubbles:1||Hydrogen silsesquioxane (HSQ):1||ITO:1||Imaging Property:1||Impregnated Palladium:1||In3SbTe2:1||Inductively coupled plasma (ICP):1||Infrared nanoscopy:1||Ink Jet:1||InkJet Printing:1||Interface defect:1||Ion:1||Irradiation:1||KOH:1||Lattice distortion:1||Layer:1||Leakage current:1||Light extraction efficiency:1||Lighttrapping:1||Lithography Simulation:1||LorentzDrude model:1||MEEF:1||MIM:1||MOSFET:1||Magnetization:1||Mask 3D Effect:1||Mask inspection:1||Mechanical Milling:1||Memory operation without selectors:1||Mesoporous Tin Oxide:1||Metal:1||Metal thin layer:1||Metrology:1||Mo:1||MoSi:1||Motheye structures:1||Multilayer:1||Multilayer mirror:1||NILS:1||Nanoimprint:1||Nanoimprint lithography:1||Nanomaterials:1||Nanoscale chemical visualization:1||Nanoscale multilayer:1||Nanostructures:1||Nanowires:1||NearAtmosphericPressure Plasma:1||Ni electroplating:1||Nickel:1||Nickel template:1||Nitrogen radical:1||NonGlobalWarming Gas:1||Nonglobal warming gas:1||OH radical:1||Oblique angle deposition:1||Operation voltage polarity:1||Optical Property:1||Optical band gap:1||Optical property:1||Organic Field Effect Transistor:1||Organic field effect transistor:1||Oxygen:1||Oxygen vacancy:1||P3HT:1||PDMS stamp:1||Patterning:1||Pellicle:1||Phase change material:1||Phase change memory:1||Phase shift mask:1||Phasechange material:1||Phasechange memory:1||Phosphor film:1||Photocatalyst:1||Photoreaction:1||Photoresist metrology:1||Plasma Etching:1||Plasma etching:1||Polyimide:1||Polystyrene Nanosphere:1||Positive chemically amplified resist:1||Process Window:1||Quarterwave plate:1||Raman:1||Raman spectra:1||Raman spectroscopic image analysis:1||Raman spectrum:1||ReRAM:1||Registration:1||Removal force:1||Resist:1||Resistive Switching:1||Resistive switching memory:1||Reverse NanoImprint:1||Reverse nanoimprint:1||Rotational reactor:1||Ru:1||SAM coating:1||SPL:1||SRAF:1||STM:1||Scatteringtype scanning nearfield optical microscope (sSNOM):1||SiNx Membrane:1||SiNx membrane:1||Sidewall Angle:1||Silicon Carbide:1||Silicon dioxide (SiO2)<:1||Silver:1||Simulation:1||SnO2/MgO:1||SolGel Method:1||Solgel:1||Spinon dielectric:1||Spinon glass:1||Stochastic:1||Stochastic simulation:1||Storage materials:1||Stress:1||Structural Property:1||SubResolution Assist Feature:1||Substrate:1||Substrate dependency:1||Surface Roughening:1||Surface plasmon resonance:1||Surface treatment:1||Switching parameters:1||TDDB:1||TPT/PDMS stamp:1||TaN:1||Textured substrate:1||Thermal deformation:1||Thermal evaporation:1||Thermoset polymer:1||Thin film:1||Thin film composition:1||Thin film solar cell:1||Thinfilm phosphor:1||Threshold switching selector:1||Ti1xAlxN/CrN:1||TiN electrode:1||TiO2:1||TiO2 Nanoparticle:1||Time Stress:1||Tin oxide:1||Transmission electron microscopy:1||Transmission electron microscopy (TEM):1||Trifluoroiodomethane (CF3I)<:1||Underlayer:1||VSB:1||Vacancy:1||White light emitting diodes:1||Wide thermal annealing:1||XPS:1||Y2O3 film:1||Y2O3:Eu3+ Phosphor Film:1||Y2O3:Eu3+ thinfilm phosphor:1||YAG phosphor incorporated film:1||Yttrium Oxide:1||Z(2)FET:1||Zigzag film:1||Zinc oxide:1||ZnO:1||ZnO thin film:1||ZrO2 nanoparticle:1||absorber:1||absorber stack:1||actinic:1||actinic inspection:1||aerial image:1||alumina:1||aluminum nitride:1||amorphous silicon:1||anatase TiO2:1||annealing:1||antisticking property:1||atomic layer deposition (ALD):1||band structure:1||chemical vapor deposition:1||coefficient of thermal expansion:1||confined size:1||critical dimension:1||critical dimension (CD):1||crystallization:1||defect concentration:1||dehydrogenation:1||deuterium:1||dielectric constant:1||dielectric stacking:1||diffusion:1||distortion:1||effective area generating signal:1||electronic band structure:1||extreme ultraviolet:1||extreme ultraviolet mask:1||extreme ultraviolet pellicle:1||ferroelectric film:1||ferromagnetic materials:1||fibers:1||flexible devices:1||fourbeam interference lithography:1||grain size:1||graphene dielectrics:1||hafnium oxide:1||hafnium oxide film:1||high harmonic generation:1||highkappa dielectrics:1||hollow cathode plasma:1||hybrid mask mold:1||hydrazine:1||hydrogenated amorphous silicon:1||image mapping:1||image processing:1||inductively coupled plasma (ICP):1||interface trap density:1||laser beam spot size:1||low thermal budget process:1||manufacturing process:1||mechanical properties:1||mechanical stability:1||memory window:1||metal gate stack:1||metal precursor:1||metalinsulatormetal (MIM) capacitor:1||methanol:1||metrology:1||micropatterned graphene:1||microscopic behaviour:1||microstructure:1||missing hole:1||molybdenum alloys:1||multilayers:1||nanocrystallization:1||nanoelectronics:1||nanoimprint lithography:1||nanolithography:1||noncovalent functionalization:1||normalized image log slope (NILS):1||optical proximity correction:1||organic thin film transistor:1||oxidation:1||phase change materials:1||phase change memory:1||phase shift mask (PSM):1||photoassisted polymer transfer lithography:1||photolithography:1||photomask:1||photon shot noise effect:1||physisorption:1||plasma etching:1||plasma materials processing:1||plasmaenhanced ALD:1||polycrystalline ZnO:1||polydimethylsiloxaene:1||potential barrier:1||power consumption:1||reliability:1||resistance change random access memory:1||resistance random access memory:1||resistance switching:1||resistive switching:1||resistivity:1||side lobe intensity:1||sidewall angle:1||silicon alloys:1||size 0:1||soft lithography:1||spectral line breadth:1||spectral line intensity:1||spincoater:1||sputter etching:1||standoff distance:1||stressstrain curve:1||subresolution assist feature:1||transmission electron microscopy (TEM):1||trap charge:1||trichlorodisilane:1||trimethyl aluminum (TMA):1||twodimensional periodic structure:1||ultimate tensile strength:1||water bath:1||wet etching:1||wide thermal annealing:1||work function rolling off:1||wrinkle:1||zirconium silicide (ZrSi2):1||(iPrCp)(2)Y(iPramd):1||1 mum to 4 mum:1||1S1R:1||1TDRAM:1||2D peak:1||2Dband intensity:1||2Dband line width:1||3CDS:1||3D XPoint:1||5O(2):1||5Zr(0):1||AFM:1||AMC:1||ARC:1||Absorber:1||Absorber Layer:1||Absorber materials:1||Absorber thickness:1||Actinic:1||Aerial Image:1||AlDoped ZnO:1||Al2O3:1||Alternating phaseshift mask (PSM):1||Aluminum oxide:1||Anionic surfactant:1||Anisotropic etching:1||Annealing Effect:1||Antiadhesive layer:1||Aromatic hydrocarbon:1||Atomic Layer Deposition:1||Atomic layer etching:1||BEUV phase shift mask:1||Beyond EUVL:1||Birefringence:1||Blank defect:1||Blank inspection:1||Bulk defect:1||C:1||CF3I:1||CVD Chamber:1||Carbon Contamination:1||Carrier concentration:1||Cell viability:1||Chemical residue:1||Chemical synthesis:1||Coherent Diffractive Imaging:1||Coherent Scattering Microscopy:1||Coherent scattering microscopy:1||Cr film:1||Crystallization:1||Dband signal:1||Defectivity:1||Deflector:1||Digital Printing:1||Direct printing:1||Distortion:1||Dopant:1||Doping:1||Drug delivery:1||Ebeam lithography:1||Ebeam mask writer:1||EUV Mask:1||EUV mask:1||EUV phase shift mask:1||EUV reflectivity:1||Elastic modulus:1||Electrical Stress:1||Electrical stress:1||Embossing lithography:1||Epoxy resin:1||Extreme Ultraviolet Lithography:1||

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