ScholarWorks@Hanyang University: Chung, Chin Wook

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Chung, Chin Wook (정진욱)

COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)

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Tel 02-2220-0344
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plasma diagnostics:9||plasma density:8||Inductively coupled plasma:7||plasma temperature:5||ICP:5||discharges (electric):5||argon:4||plasma uniformity:4||inductively coupled plasma:4||electron temperature:3||Langmuir probe:3||Plasma:3||capacitively coupled plasma:3||plasma heating:3||EH mode transition:3||plasma sheaths:3||plasma collision processes:3||plasma transport processes:3||plasma parameter:3||magnetic resonance wireless power transfer:2||Electron temperature:2||Nanoparticles:2||Silane plasma:2||floating harmonic method:2||Floating probe:2||Plasma density:2||helium:2||parallel resonance:2||wireless power transfer:2||Dusty plasma:2||KSTAR:2||Wireless power transfer:2||oxygen:2||plasma:2||highfrequency discharges:2||Plasma uniformity:2||PlasmaInduced Dewetting:2||Electron energy distribution:2||electromagnetic coupled resonator:2||plasma distribution:2||Langmuir probes:2||Power transfer efficiency:2||Copper:2||electron energy distribution:2||electron energy distribution function:2||plasma probes:2||plasma source:2||Capacitive mode:2||Biased inductively coupled plasma:2||lowk material:2||pulsed plasma:2||O2 plasma treatment:1||OES:1||PFC stability:1||PID control:1||POLYMERIZABLE SUPRAMOLECULAR (PS) SENSOR:1||Particle and heat fluxes:1||Particle critical size:1||Particle growth:1||Photoresist:1||Phytic acid:1||Plasma Parameters:1||Plasma Treatment:1||Plasma corrosion:1||Plasma corrosion resistance:1||Plasma nonlinearity:1||Plasma perturbation:1||Plasma resistance:1||Plasma sources:1||Poisson equation:1||Power dissipation:1||Process Parameters:1||RE bias power Impedance transition:1||RF bias power:1||RF compensation:1||Recipe Solution:1||ScaleUp:1||Semiconductor processing:1||Sideband signal:1||Thinfilm composite membrane:1||Tokamak edge plasma:1||Twodimensional electrical diagnostic:1||Uniformity:1||Void formation:1||Y2O3:1||YAG:1||Yttrium oxide:1||Yttriumbased coating:1||aluminium compounds:1||anodic aluminum oxide:1||antennas in plasma:1||bias frequency:1||bias power:1||biopolymers:1||capacitive load:1||capacitiveinductive (EH) heatingmode transition:1||cerium(IV):1||cold plasma:1||control of electron energy distribution:1||coupling coefficient tuning:1||deposition plasma:1||diagnostic method:1||diagnostics:1||dielectric film thickness:1||dielectric materials:1||dielectric thin films:1||double probe:1||dualfrequency CCP:1||electrical probe:1||electron and ion density profile:1||electron beam:1||electron density:1||electron energy probability function:1||electron heating:1||electron local kinetics:1||electron nonlocal kinetics:1||electronegativity:1||electrostatic probe:1||ethylene glycol:1||external filter:1||ferrite:1||ferritecore:1||floating harmonic method (FMH):1||floating harmonic sideband method:1||floating probe:1||floating probe method:1||gas mixtures:1||grid system:1||helical antenna:1||high efficient discharge:1||hollow cathode:1||hybrid plasma source:1||hysteresis:1||improvement of a plasma generation:1||insitu measurement:1||inductive mode:1||inductively coupled oxygen plasma:1||inductively coupled plasma (ICP):1||inductively coupled plasma source:1||inductively coupled plasmas:1||ion density distribution:1||ionization efficiency:1||low temperature plasma:1||lowfrequency plasma:1||matcher efficiency:1||measurement:1||metastable density:1||microwave probe:1||multichannel transmitters:1||negative ion density distribution:1||neutral gas depletion:1||nitrogen:1||nitrogen plasma:1||nonlinear circuit:1||passive filter:1||passive resonant antenna:1||passive resonant coil:1||photoresist:1||photoresist etching uniformity:1||plasma ashing processing:1||plasma boundary layers:1||plasma control:1||plasma corrosion:1||plasma coupling effect:1||plasma diagnostic:1||plasma etch rate:1||plasma instability:1||plasma materials processing:1||plasma parameters:1||plasma polymerization:1||plasma pressure:1||plasma processing:1||plasma processing and deposition:1||plasma thermodynamics:1||power absorption to plasma:1||probability:1||pulse modulated plasma:1||pulsed plasmas:1||quasineutrality:1||radiofrequency (RF) gas discharge:1||realtime measurement:1||reliability:1||remote plasma source:1||resonant antenna:1||series resonance:1||spatial plasma distribution:1||spectrophotometry:1||square voltage:1||square voltages:1||waferlevel measurement:1||wireless wafertype probe:1||강자성체 유도 결합 플라즈마:1||전력 효율:1||APS:1||플라즈마 소스:1||ATMOSPHERIC PRESSURE ARGON PLASMA JET (ARPJ):1||Aluminum oxide:1||Aluminumbased coating:1||Anodization:1||Atmospheric plasma spray:1||BIOPLASMA:1||Blob radial velocity:1||CO2/N2 separation:1||Capacitively coupled plasma:1||Capacitively coupled plasma (CCP):1||Cleaning process:1||Contamination particle:1||Contamination particle generation:1||Copper Organic Solderability Preservative:1||Corrosion properties:1||DC blocking capacitor:1||Defluorination:1||Dissipated power in system:1||E:1||EEPF:1||ELM behavior:1||Electric probe diagnostics:1||Electron energy distribution function:1||Electron heating:1||Electron heating mechanism:1||Electron series resonance:1||FRAGMENTED:1||FarSOL plasma:1||Feedback:1||Ferrite ICP:1||Ferrite core ICP:1||Ferrite inductively coupled plasma (ICP):1||Fine Pitch Flipchip:1||Fluorinebased plasma:1||Global Model:1||Gutter layer:1||HE mode transition:1||Harmonics:1||Hybrid probe:1||Impedance matching effect:1||Inductive mode:1||Inductively coupled plasma (ICP):1||Langmuir probe perturbation:1||Largearea CCP:1||Lowk material:1||M simulations:1||MITOCHONDRIA:1||Mixedmatrix membrane:1||Multielectrode:1||Nanoscale Copper Pad Surface:1||

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