ScholarWorks@Hanyang University: Park, Wan jun

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Park, Wan jun (박완준)

COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)

Research Area: 반도체소자

Tel 02-2220-4315
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magnetic tunnel junction (MTJ):4||Graphene:4||Magnetic tunnel junction:4||Carbon Nanotube:3||Network:3||Transistor:3||perpendicular magnetic anisotropy (PMA):2||Magnetic tunnel junction (MTJ):2||Dielectric:2||telegraphic switching:2||CNT:1||CNTFET:1||Calibration circuit:1||Carbon Nanotubes:1||Carbon nanotube:1||Carbon nanotube Network:1||Carbon nanotubes:1||Charge transfer:1||CoFeBZr:1||CobaltZirconium Alloys:1||Conductive Yarn:1||Cubic spline interpolation:1||Currentdriven switching:1||Double Graphene Layer:1||Energy harvesting:1||Epoxy:1||Ether:1||Fe/MgO:1||Fieldeffect transistors (FETs):1||Flexible Substrate Patterning:1||Flexible Transducer:1||Grain Boundary:1||Graphene Absorbent:1||Graphene Composite:1||Graphene Composites:1||Graphene Edge:1||Graphene Field Effect Transistor:1||Graphene Force Sensors:1||Graphene Nanoplatelet (GNP):1||Graphene Pressure Sensors:1||Graphene Sensor:1||Graphene Sponge Composite:1||Graphene Strain Sensor:1||Graphene Strain Sensors:1||Graphene ThinFilm:1||Graphene Transfer:1||Graphene electrodes:1||Graphene flakes:1||Graphene sensors:1||Graphene strain sensors:1||Half metal:1||Health care:1||Hensler alloy:1||Hydrophobic Coating:1||Interface device:1||Interfacial Magnetic Anisotropy:1||MTJ switching:1||Nanocomposites:1||Oil Absorbent:1||PECVD:1||PENGs:1||Passivated Graphene Composite:1||Passivation:1||Pavlov associative memory:1||Percolation:1||Perpendicular Magnetic Anisotropy:1||Perpendicular magnetic anisotropy:1||Plasma treatment:1||Polar Energy:1||Pressure Amplifying Structure:1||Pressure Sensor:1||Pressure Sensors:1||Pressure sensors:1||Reconfigurable logic:1||Sensor array:1||Sign language translator:1||Single Graphene Layer:1||Singlelayer graphene:1||Smart glove:1||Spintransfer torque:1||Strain Sensor:1||Strain sensor:1||Surface Energy:1||Switching stability:1||Thermal Retention Stability:1||Thermal activation of magnetization switching:1||Thermal magnetization stability:1||Transport:1||Voltage offset:1||Wearable pressure sensors:1||Wet Transfer:1||ZTO@PVDF nanocomposites:1||Zinc Oxide:1||ZnSnO3:1||adsorption:1||aluminium compounds:1||beta:1||boolean function:1||carbon nanotubes:1||conductive polymer composites:1||damping constant:1||electron traps:1||field effect transistors:1||force sensors:1||graphene:1||graphene foams:1||graphene nanocomposites:1||interfacial anisotropy:1||logic gate:1||magnetic tunnel junctions:1||magnetoelectric effect:1||nanosprings:1||nanowires:1||neuromorphic computing:1||neuromorphic engineering:1||phase:1||photolithography:1||polycarbonate:1||reconfigurable logic:1||silicon devices:1||spintransfer torque:1||stretchable conductors:1||tactile classification:1||tactile sensors:1||texture recognition:1||thermal treatment:1||&:1||transistor:1||1/f Noise:1||3D foam:1||Aluminum Oxide:1||Anisotropy energy:1||Antioxidant Coating:1||Associative memory:1||Atomic Layer Deposition:1||Bit stream:1||Boolean logic:1||

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