ScholarWorks@Hanyang University: Choi, Chang hwan

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Choi, Chang hwan (최창환)

COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)

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Tel 02-2220-0383
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Resistive switching:7||Sputtering:5||resistive switching:5||neuromorphic computing:5||Neuromorphic computing:4||gallium arsenide:3||ALD:3||Thin film transistor:3||ZnS:3||boron nitride:3||Atomic layer deposition:3||semiconductors:3||SiC:3||Annealing:3||threshold switching:3||Quaternary Target:2||RRAM:2||passivation:2||Neuromorphic engineering:2||Electronic materials:2||photodetectors:2||TFET:2||GaN device:2||CBRAM:2||Cu2ZnSnS4:2||Aldoped HfO2:2||Oxygen Vacancy:2||Defect:2||CMOS integration:2||silicon nitride:2||PBTI:2||specific contact resistivity:2||STDP:2||synapse:2||Memristor:2||Hafnium oxide:2||Metal gate:2||Semiconductor:2||Diffusion:2||Interface trap density:2||HfO2:2||Highk:2||germanium:2||Monolithic 3D:2||Kesterite:2||Plasma Passivation:2||CZTS:2||Workfunction:2||Solar Cell:2||La2O3:2||Plasma treatment:2||ALD Al2O3:2||memristor:2||memristors:2||Charge trapping:2||ALD HfO2:2||Biological synapse:2||Artificial synapse:2||Surface modification:2||annealing:2||Electrical properties:2||artificial synapse:2||CAACIGZO:2||GaN MOSCAP:1||Gate Stack:1||GeO2:1||Graphene oxide:1||H2S:1||Hafnium aluminum oxide:1||Hermann Ebbinghaus forgetting curve:1||Heterostructure thin film:1||Highk Dielectric:1||Highk gate dielectric:1||Highk material:1||Highk/Metal Gate:1||Highkappa gate dielectric:1||Human computer interaction:1||Hybrid organicinorganic perovskite:1||Hybrid oxides:1||IIIV:1||ITO:1||Impact of active electrodes:1||Improved endurance performance:1||In situ NH3 plasma passivation:1||InGaZnO (IGZO):1||InGaAs imager:1||Integrated circuit interconnections:1||Interface State Density:1||Interface defect:1||Interface state density:1||Interface trap (Nit):1||Interfacial layer (IL):1||Junctions:1||La incorporation:1||Lanthanumdoped HfO2:1||Laser Annealing:1||Layer transfer:1||LayerThinning:1||Light stimulation:1||Lightassisted erasing:1||Lithium ion batteries:1||Local Trap:1||Logic gates:1||Low Frequency Noise (LFN):1||Low Temperature Bonding:1||Low temperature:1||MOS Device:1||MOSFET:1||MXene:1||Mechanical Exfoliation:1||Memristors:1||Metal Ink:1||Metalinduced crystallization:1||Metals:1||Midgap workfunction:1||MoS2:1||Monolithic 3D (M3D):1||Monolithic integration:1||Multilevel RESET:1||Multilevel resistance states:1||Multilevel resistive switching:1||Multiple states:1||Nchannel transistor:1||NAND flash:1||NBTI:1||Nanostructures:1||Nanowires:1||Neural network simulation:1||Neuromorphic memristor:1||O2 plasma:1||Organic field effect transistor:1||Organicinorganic hybrid halide perovskites:1||Oxide:1||Oxygen vacancies:1||Ptype ZnO:1||PET:1||PPh3:1||Particle Binding:1||Passivation:1||Performance evaluation:1||Perovskite:1||Photodetector:1||Photoluminescence:1||Photonic:1||Phototransistor:1||Plasma atomic layer deposition:1||Plasma enhanced atomic layer deposition:1||Plasma hydrogen passivation:1||Plasticity:1||Polarization:1||Polydimethylsiloxane (PDMS):1||Polymer Substrate:1||Posttetanic potentiation:1||Power device:1||Pulsepaired facilitation:1||Quantum dot:1||RESETstop voltage:1||RTS noise amplitude:1||Raman:1||Rapid thermal annealing:1||ReRAM:1||ReS2:1||Reliability:1||Reram:1||Reverse Imprinting:1||Ring oscillators:1||SF6 plasma:1||Schottky barrier:1||Schottky barrier effect:1||Schottky barrier height:1||Secondary Phase:1||Silicon:1||Silicon dioxide:1||Sintering:1||SnO2:1||SnO2/MgO:1||SnS2:1||SolGel:1||Solgel:1||Solar cell:1||SrTiO3:1||Stress:1||Substrates:1||Subthreshold swing:1||Subthreshold swing (S.S):1||Sulfur passivation:1||Sulfurization:1||Switching:1||Synapse:1||Synapse device:1||Synapse memristor:1||Synaptic device:1||Synaptic plasticity:1||TBTDET:1||TDMAT precursor:1||TFETs:1||Ta2O5:1||Ta2O5 barrier layer:1||Ta2O5/ZrO2 bilayer film:1||TaN:1||Thermal Annealing:1||Thermal Recovery:1||Thin Film:1||Thin Film Transistor:1||Thin film solar cell:1||Thinfilm NAND flash memory:1||Threshold switching:1||Ti Diffusion:1||TiO2:1||Transmission electron microscopy (TEM):1||Transparent Conducting Oxide:1||Tunneling:1||Tunneling FET:1||Tunneling Field Effect Transistors:1||Tunneling field effect transistor (TFET):1||Tunneling fieldeffect transistor (TFET):1||Unipolar switching:1||VFB shift:1||WSe2:1||Work function:1||Wurtzite:1||XPS:1||Zinc oxide:1||ZnO:1||ZrO2 resistive switching layer:1||ZrO2 thin film:1||ZrO2/ZTO memristor:1||aluminumdoped zinc oxide:1||ambipolar current:1||amorphous BN:1||analog synaptic device:1||artificial neural network:1||artificial synaptic devices:1||atomic switch:1||bandtoband tunneling (BTBT):1||biomemristor:1||biocompatible RRAM:1||bleeding:1||cellulose nanocrystals:1||chemical synthesis:1||coercive electric field:1||conductive filament:1||crystal growth:1||crystal structure:1||degradation region:1||density function theory:1||dielectric materials/properties:1||diffusion:1||diffusive memristors:1||dry cleaning:1||effective channel width:1||electrical properties:1||electrical/electronic materials:1||electronic synapses:1||embolization:1||ferroelectric memory:1||ferroelectric thinfilm transistor:1||ferroelectricity:1||ferromagnetic materials:1||fibers:1||global warming potential:1||graphene:1||greenelectronics:1||hBN:1||handwritten digit pattern recognition:1||highk dielectrics:1||highresolution imaging:1||hotcarrier stress:1||hydrogen implantation:1||interface degradation:1||interfacial dipole:1||liquid phase epitaxy (LPE):1||metalinterlayersemiconductor structure:1||metaloxidesemiconductor capacitor:1||monolithic 3D integration:1||multilevel polarization:1||nanocomposites:1||neural devices:1||neural network:1||neuromorphic:1||neuromorphic devices:1||nitrogen doping:1||nondegenerate doping:1||oxygen difluoride:1||oxygen vacancy:1||pattern recognition:1||phase transformation:1||photosensor:1||polysilicon:1||quantum dots:1||rapid thermal annealing:1||relaxation:1||remnant polarization:1||salmon DNA:1||scanning electron microscopy:1||selfrectification:1||silicon dioxide:1||solar cells:1||sputtering:1||stoma:1||synapses:1||synaptic device:1||synaptic devices:1||synaptic material:1||tantalum nitride:1||thermal stability:1||thin:1||thinfilm transistors:1||transjugular intraheloatic portosystemic shunt (TIPS):1||transmission electron microscopy (TEM):1||transparent biomemory:1||tunneling path:1||typeconverted FET:1||varices:1||vertical channel NAND flash:1||wafer bonding:1||2D Materials:1||wetting:1||2D material:1||3D device:1||ALD TiN:1||AZO:1||Ag diffusion:1||Al:1||Al2O3:1||Al2O3 metal gate:1||Ammonium polysulfide:1||Amorphous ALD HfO2:1||Amorphous IGZO:1||AmorphousZTO layer:1||Amorphousindiumgalliumtinoxide (aInGasnO):1||Analogue switching:1||Anode:1||Ar ions plasma:1||As Doping:1||Atomic Layer Deposition:1||Atomic layer deposition (ALD):1||Band Gap Energy:1||Barrier layer thickness:1||Bipolar switching:1||Bulk defect:1||CIGS:1||CVD NbSe2:1||CdS:1||Charge trap memory:1||Chemical bath deposition:1||Complementary resistive switching:1||Contact resistance:1||Cooling:1||Cu2+ migration:1||Cu2+doped DNA:1||Debonding:1||Degradation:1||Density functional theory:1||Diffusion limiting layer:1||Diffusive memristor:1||Dipole formation engineering:1||Direct Imprinting:1||Direct bonding:1||EOT:1||EOT scaling:1||Effect of current compliance limitations:1||Electrical stress:1||Electronic synapse:1||Epitaxial Growth:1||Equivalent oxide thickness:1||FDSOI:1||Fermi level pinning:1||Fermi level unpinning:1||Fermilevel unpinning:1||Ferroelectric:1||Figure of Merit:1||Filamentary switching:1||Fintyped TFET:1||Flatband voltage:1||Flatband Voltage:1||Flatband voltage (VFB):1||Flexible substrate:1||Frequency modulation:1||GIDL:1||

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