ScholarWorks@Hanyang University: Park, Jinseong

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Park, Jinseong (박진성)

COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)

Research Area: 정보전자소재 및 소자/나노박막 공정

Tel 02-2220-0401
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Atomic layer deposition:20||oxide semiconductor:16||Thin film transistor:14||Oxide semiconductor:11||atomic layer deposition (ALD):10||atomic layer deposition:10||plasmaenhanced atomic layer deposition (PEALD):10||thinfilm transistor:9||Atomic layer deposition (ALD):8||ZnO:7||thin film transistor:6||Thin film transistors:6||Transparent conducting oxide:5||Thin film encapsulation:5||Indium oxide:5||IGZO:5||zinc oxynitride:5||InGaZnO:5||mechanical stress:4||thinfilm transistors:4||Mist chemical vapor deposition:4||Al2O3:4||Passivation:4||solution process:4||Plasmaenhanced atomic layer deposition:4||PEALD:4||TFTs:4||SnO2:3||Flexible display:3||Solution process:3||High mobility:3||MLD:3||Plasma enhanced atomic layer deposition (PEALD):3||Graphene oxide:3||dynamic logic:3||thinfilm transistors (TFTs):3||ptype:3||molecular layer deposition:3||Microstructure:3||Thin films:3||crystallinity:3||perovskite solar cells:3||Process parameters:3||Atomic Layer Deposition (ALD):3||reliability:3||Aluminum oxide:3||Ozone:3||Silicon nitride:3||Silicon oxide:3||zinc tin oxide:3||thin film transistors (TFTs):2||thinfilm transistors (TFT):2||electronic structure:2||3D NAND flash memory:2||tin monoxide:2||field effect transistors:2||fieldeffect mobility:2||Copper diffusion barrier:2||transistors:2||Semiconductor device measurement:2||nearinfrared photosensor:2||flexible:2||Crystallinity:2||Indium gallium zinc oxide (IGZO):2||Frost formation:2||oxide semiconductors:2||oxide thin film transistor:2||XPS:2||Particle size:2||ZnO film:2||DRAM:2||Solar cell:2||Ga doped ZnO:2||high mobility:2||phonon scattering:2||N2O plasmareactant:2||Ion irradiation:2||alucone:2||Stability:2||(TFTs):2||Stress:2||Substrate temperature:2||plasma enhanced atomic layer deposition:2||ALD:2||Electronic structure:2||Density functional theory:2||TFT:2||polysilicon:2||area selective deposition:2||Plasmaenhanced atomic layer deposition (PEALD):2||Density functional theory (DFT):2||Logic gates:2||indium gallium zinc oxide (IGZO):2||Evaporation:2||Airsource heat pump:2||indium oxide:2||Hydrogen:2||Thermoelectric:2||Porosity:2||semiconductor:2||Chemical vapor deposition:2||Device Instability:2||Thin Film Transistor (TFT):2||3omega measurement:2||silicon oxide:2||Fintube heat exchanger:2||logic circuit:2||stability:2||Hydrogen plasma:2||Atmospheric spatial atomic layer deposition:2||density functional theory:2||superlattice films:2||Annealing:2||Oxide Semiconductor:2||thermal annealing:2||Oxide semiconductor thin film transistor:2||thermal conductivity:2||thin film transistor (TFT):2||GeInGaO:1||Graphene:1||H2 gas sensor:1||Hafnium oxide:1||Hall mobility:1||Heat exchanger:1||Helium:1||Heterojunction:1||HfInZnO (HIZO):1||Hierarchical wrinkle:1||High pressure:1||High working pressure:1||Highk dielectric:1||Highpressure annealing:1||Hightemperature process:1||Highlyoriented crystalline:1||Hole injection barrier:1||Hump:1||Hybrid materialIndium oxide:1||Hydrogen annealing:1||Hydrogen dissociation:1||Hydrogen ion:1||Hydrogen peroxide:1||HydrogenResistance:1||Hydrogenfree precursor:1||ITZO:1||Ideal reaction:1||InGaZnO (IGZO):1||InGaZnO compositeoxide:1||In2O3:1||InGaZnO (IGZO):1||InOx:1||Inclination angle:1||Indium–gallium–zinc oxide (IGZO):1||Indium oxide (In 2 O 3 ):1||Indium oxide (InOx):1||Indium tin oxide:1||Indiumzinc oxide:1||Instability:1||Iron:1||LTPS TFT:1||Ligand engineering:1||Lithiumoxygen batteries:1||Load invertor:1||Low illumination:1||Low temperature:1||Low voltage:1||Low voltage operation:1||MNB:1||Material mixing method:1||Mechanical hardness:1||Memory device:1||Metal oxide semiconductor:1||Metal oxide thin film:1||Metalorganic precursor:1||Metalpolymer nanocomposite thin film:1||Metasurface:1||MicroLED:1||Microcrystalline:1||Microcrystalline silicon:1||Mist  CVD:1||Mist CVD:1||Mobility:1||Moisture penetration barrier:1||Molecular layer deposition:1||Molecular layer deposition alucone films:1||Multicrystalline silicon wafer:1||Multilayer film:1||Ntype:1||N2O PlasmaReactant:1||N2O plasma:1||N2O plasma treatment:1||NBTI:1||NIST:1||Nano indentor:1||Nanocrystallization:1||Nanolaminate:1||Nanostructure:1||Nanotechnology:1||Negative bias illumination stress (NBIS):1||Negative bias stress:1||Negative bias stress (NBS):1||New Indium Precursor:1||Nitrogen Doping:1||Nitrogen doping:1||Nitrous oxide (N2O) plasma reactant:1||Novel In precursor:1||Nucleation control:1||OLED:1||Organic light emitting diodes (OLEDs):1||Organic thin film transistor (OTFT):1||Organicinorganic hybrid:1||Ostwald ripening:1||Oxide semiconductor thin film transistors:1||Oxide semiconductors:1||Oxide thin film transistor:1||Oxide thinfilm transistor:1||Oxidebased TFTs:1||Oxides:1||Oxygen Diffusion Barrier:1||Oxygen partial pressure:1||Oxygen pressure:1||Oxygen reactants:1||Oxygen vacancy:1||Oxynitride:1||Ptype:1||PMMA:1||Pd:1||Performance evaluation:1||Permeability:1||Photon irradiation:1||Plasma:1||Plasma enhance atomic layer deposition:1||Plasma polymer fluorocarbon:1||PlasmaEnhanced Atomic Layer Deposition:1||Plasmaenhanced AtomicLayer Deposition:1||Plasmainduced damage:1||Plasmapolymerfluorocarbon:1||Plasmapolymerizedfluorocarbon:1||Plasmapolymerizedfluorocarbons:1||PolySi:1||Positive bias illumination stress (PBIS):1||Positive bias stress (PBS):1||Power device:1||Power factor:1||Preferred orientation:1||Quadrupole mass spectrometer:1||Quantum confinement effect:1||RIE:1||Raindrops energy harvester:1||Random access:1||Reactive sputtering:1||Refractive index:1||Resistivity:1||RutheniumTitanium Nitride:1||Sandwich structures:1||Scattering mechanism:1||Seebeck:1||Seebeck Coefficient:1||Seebeck coefficient:1||Semiconductor:1||Sequence of surface treatment:1||Short channel:1||SiN films:1||SiO2:1||SiO2 thin film:1||SiONC:1||Silicon:1||Silicon dioxide:1||Silicon oxynitride (SiO<sub>x</sub>N<sub>y</sub>):1||Silicondoped InSnO:1||Silver bismuth sulfide:1||Small molecular inhibitor:1||SnO:1||SnO2 electron transporting layers:1||Solution oxide semiconductor:1||Sputtering:1||SrTiO₃:1||Step coverage:1||Superhydrophobic:1||Superlattice:1||Superlattice Film:1||TCAD simulation:1||TDMASn:1||Tantalum nitride:1||Tantalum nitride thin films:1||Thermal Conductivity:1||Thermal Transport:1||Thermal atomic layer deposition:1||Thermal stability:1||Thermoelectric material:1||Thermoelectrics:1||Thickness measurement:1||Thin Film Transistor:1||Thin film:1||Thin film transistors(TFTs):1||ThinFilm Transistors (TFTs):1||TiO2x:1||Tin dioxide:1||Tin oxide:1||Transistors:1||Transmission Electron Microscopy:1||Transmission line measurements:1||Transparent Conduction Oxide (TCO):1||Transparent conducting oxide (TCO):1||Transparent conductive oxide (TCO):1||Trap density reduction:1||Triboelectric nanogenerator:1||Triboelectric nanogenerators:1||Triboelectric skin:1||Tunneling oxide layer:1||UPS:1||UV:1||UV n(+) doping:1||UVO:1||Ultrahigh mobility:1||Vanadium dioxide (VO2):1||Vapour deposition:1||Water vapor transmission rate:1||Wettability:1||Wide ALD window:1||Work function:1||Xray absorption:1||Xray absorption spectra:1||Xray diffraction:1||Xray photoemission spectroscopy:1||XRD:1||Zirconium silicate:1||ZnSnO:1||ZnON:1||Znon:1||ZrO2:1||aIGZO:1||aIZO:1||active layer:1||alumina (Al2O3):1||amorphous indium tin gallium oxide:1||amorphous metal oxide semiconductor thinfilm transistors:1||amorphous oxide semiconductor:1||amorphous oxide thinfilm transistor (TFTs):1||amorphous semiconductor:1||amperometric:1||annealing:1||antireflection coatings:1||antireflective effect:1||area selective atomic layer deposition:1||areaselective ALD:1||atmospheric pressure:1||band structure:1||bending stress:1||biaxial stretching:1||bifacial solar cells:1||bilayer oxide semiconductors:1||bulk heterojunction:1||cadmium selenide:1||carryfree gate driver:1||cell design and operation:1||chemical composition fraction:1||colortunable solar cells:1||complementary metaloxidesemiconductor:1||conductive composite:1||controlled phase:1||coplanar TFT:1||crossplane thermoelectric properties:1||crystallisation:1||crystallization:1||decoder:1||deep ultraviolet:1||degradation mechanism:1||deposition temperature:1||device instability:1||diethylene glycol:1||diffusion:1||dual channel modulation of thinfilm transistors:1||dual gate structure:1||durability:1||electrical stress:1||electrospinning:1||erase operation:1||etching mechanism:1||fieldeffect transistor:1||filler alignment:1||flash white light:1||flexible TFT:1||flexible device:1||flexible display:1||flexible electronics:1||flexible/stretchable display:1||fluorine dopants:1||fluorine plasma:1||formamide:1||galliumdoped indium oxide:1||gas diffusion barrier:1||gas diffusion mechanism:1||gate driver:1||gate insulator:1||gateinduceddrainleakage (GIDL) erase:1||gateinsulator:1||grain boundaries:1||grain size:1||graphitic carbon:1||graphitization:1||heterogeneous:1||heterointerface:1||highK gate insulator:1||highaspectratio (HAR):1||highk gate insulator:1||highmobility thin film transistor:1||highpressure annealing:1||highpressure annealing (HPA):1||highpressure annealing InGaZnO:1||highreliability:1||hightemperature stability:1||highly oriented crystalline:1||hump characteristics:1||hybrid channel (HC):1||hydrogen:1||hydrogen dissociation:1||hydrogen permeability:1||hydrogen resistivity:1||hydrogenresistance:1||illumination:1||inclined fluorine sputtering processes:1||indicone:1||indium free:1||indium gallium zinc oxide (IGZO) semiconductor:1||indium galliumoxide (IGO):1||indium oxide (InOx):1||indium oxide semiconductor:1||indium tin gallium oxide (ITGO):1||indiumgallium zinc oxide (IGZO):1||indiumgalliumzinc oxide:1||indiumgalliumzinc oxide (IGZO) semiconductor:1||indiumgalliumzincoxide:1||indiumgalliumzincoxide semiconductors:1||indiumtingallium oxide:1||inhibitor:1||inorganic/organic structure:1||intense pulsed light (IPL):1||interface scattering:1||lactic acid:1||logic circuits:1||low temperature annealing:1||low temperature process:1||low voltage operation:1||lowk dielectrics:1||lowtemperature plasmaenhanced atomic layer deposition:1||lowtemperature process:1||lowvoltage operation:1||magnetic field:1||magnetic filler:1||magnetron sputterings:1||mechanical durability:1||melting temperature:1||metal oxide semiconductor:1||metalinsulatorsemiconductor capacitor:1||mist chemical vapor deposition:1||molecular electronic states:1||monolithic stacked:1||multichannel TFT:1||ntype oxide semiconductor:1||nanofibers:1||nanolaminate structure:1||nanostructure:1||near infrared:1||negative bias illumination stability (NBIS):1||negative bias illumination stress (NBIS):1||nickel oxides:1||nitrogen (N) doping:1||nitrogen doping:1||nonenzymatic:1||novel indium precursor:1||organic passivation layer:1||oxide semiconductor thin film transistor:1||oxide semiconductor thin film transistors:1||oxide semiconductor thinfilm transistors (TFTs):1||oxide thinfilm transistor:1||oxideTFT:1||oxygen defects:1||oxygen plasma treatment:1||oxygen vacancy:1||ptype oxide materials:1||ptype oxide semiconductor:1||passivation:1||passivation layer:1||percolation threshold:1||perovskites:1||persistent photoconduction:1||phonon transport:1||photo thinfilm transistor:1||photothinfilm transistor:1||photochemical reaction:1||photodetector:1||photoresponsivity:1||phototransistor:1||planar perovskite solar cells:1||plasmaassisted molecular layer deposition (PAMLD):1||plasmaenhanced atomic layer deposition:1||plasmaenhancedatomic layer deposition (PEALD):1||plasmapolymerfluorocarbon:1||plasmapolymerized fluorocarbon:1||polypyrrole:1||polytetrafluoroethylene:1||positive biastemperature stress (PBTS):1||positivebias temperature stress (PBTS):1||post process:1||print:1||quantum dots:1||rGO/ZnO nanoparticle DeBonding Layer:1||reaction energy:1||reactive ion etching:1||reactive sputtering:1||resistivity:1||rolling stress:1||selectivity:1||semiconducting channel:1||semiconductor device:1||semiconductor growth:1||semiconductor materials:1||semiconductor thin films:1||sequential design:1||silicon dioxide (SiO2):1||silicon oxide.:1||silicon oxynitride (SiON):1||solgel process:1||sputter deposition:1||sputtering:1||stabilities:1||stress:1||stress distribution (vonMises stress):1||stretchable aIGZO TFT:1||subchannel formation by hydrogen diffusion:1||subthreshold swing control:1||superhydrophobic:1||surface reaction mechanism:1||sweat:1||technology computeraided design (TCAD) simulation:1||tellurium:1||tensile strain:1||thermal annealing ASALD:1||thermal study:1||thin film:1||thin film transistors:1||thinfilm transistor (TFT):1||thinfilm transistors with high mobility and high stability:1||thinfilmtransistor (TFT):1||thinfilm transistors (TFTs):1||tin dioxide:1||tin films transistors (tfts):1||tin oxide:1||titanium compounds:1||transistor:1||transparent conducting oxide:1||transparent flexible electronics:1||transparent photodetector:1||trimethyl[N(2methoxyethyl)2methylpropan2amine] gallium (TMGON):1||tris(tertbutoxy)silanol:1||twochannel thinfilm transistor (TC TFTs).:1||ultrahigh mobility:1||ultraviolet irradiation:1||ultrafast fabrication process:1||ultrahigh mobility:1||uniaxial stretching:1||vertical complementary metaloxidesemiconductor inverter:1||vertical dimension:1||vibration touch panel:1||visible light:1||wearable electronic device:1||xray absorption spectroscopy:1||xray spectroscopy:1||>:1||zincoxynitride:1||(A) Films:1||(AP SALD):1||(C) Chemical properties:1||(C) Electrical properties:1||(D) Al 2 O 3:1||(PEALD):1||(Tertbutylamino)dimethylsilane (TBADMS):1||([3(dimethylamino)propyl] dimethyl indium) (DADI) precursor:1||(eta(5):eta(1) Cp(CH2)(2)NMe)Hf(NEtMe)(2)(MAPHf01):1||3omega Technique:1||385 nm UV LED lamp:1||3D NAND:1||AIGZO:1||ALD oxidant:1||Accumulation thickness:1||Active matrix liquid crystal display (AMLCD):1||Active matrix organic light emitting diode (AMOLED):1||Al doped ZnO:1||Al doped ZnO (AZO):1||Al doping concentration:1||Al(acac)(3):1||AlDoped ZnO Film:1||Aldoped ZnO:1||AlZnO:1||Allinorganic photovoltaics:1||Alucone:1||Aluminium dopedZnO(AZO):1||Aluminum doped tin oxide:1||Amorphous carbon:1||Amorphous indiumgalliumzinc oxide (aIGZO):1||Amorphous indiumgalliumzinc oxide thinfilm transistor (aIGZO TFT):1||Amorphous indiumgalliumzinc oxide thinfilm transistors:1||Amorphous indiumgalliumzincoxide thinfilm transistor (aIGZO TFT):1||Amorphous indiumgalliumzincoxide thinfilm transistors (aIGZO TFTs):1||Amorphous oxide semiconductor (AOS):1||Antireflection coating:1||Antimicrobial fabric:1||Antireflection:1||Aqueous solution:1||Atmospheric:1||Atmospheric pressure:1||Atmospheric process:1||Atmospheric spatial atomic layer deposition (AP SALD):1||Atom probe tomography:1||Atomic Layer Deposition:1||Atomic layer deposition Al2O3 films:1||Barrier films:1||Bias instability:1||Bias stability:1||Bis(Nethoxy2 2dimethyl propanamido)tin:1||Breakdown field:1||Buffer layers:1||Byproduct:1||CNT/Ag/PFTE ternary composite target:1||Carbon nanofibers:1||Carbonmetal oxide hybrids:1||Carrier concentration:1||Carrier gas:1||CellOnPeri (COP):1||Chemical state:1||Clfree Si precursor:1||Colorless polyimide:1||Composite material:1||Conducting mechanism:1||Conductivity:1||Contact resistance:1||Copper oxide:1||Crystal facet control:1||Cuprous oxide:1||Debonding layer:1||Decoder:1||Depth profile:1||Deuterium annealing:1||Device instability:1||Device reliability:1||Device stability:1||Discrete reactant feeding (DRF):1||Display backplane:1||Displays:1||Divalent precursor:1||Doping:1||Drainage:1||ELA:1||Edge effects:1||Efficiency:1||Electrical properties:1||Electroceramics:1||Energy level alignment:1||Environmentalfriendly:1||External compensation:1||FRAM:1||FieldEffect Transistor (FET):1||Film degradation:1||Flexible TFT:1||Flexible TFTs:1||Flexible device:1||Flexible electronic device:1||Flexible perovskite solar cell:1||Flexible perovskite solar cells:1||Flexible transparent electrodes:1||Fluorinedoped tin oxide (FTO):1||Freestanding electrode:1||Frosting:1||G(2)O(3) thin film:1||GaN:1||Gallium isopropoxide:1||Gallium oxide:1||Gallium triisopropoxide (GTIP):1||Gas barrier:1||Gas diffusion barrier:1||Gas sensor:1||Gasinduced debonding:1||Gate driver:1||Gate insulator:1||Gate insulators:1||Gate spacer:1||GeInGaO:1||

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