ScholarWorks@Hanyang University: Jeong, Jae Kyeong

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Jeong, Jae Kyeong (정재경)

COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)

Research Area: 반도체 소자

Tel 02-2220-2327
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thinfilm transistor:18||high mobility:12||atomic layer deposition:10||High mobility:9||Thinfilm transistor:9||oxide semiconductor:8||thinfilm transistors:7||thinfilm transistors (TFTs):6||fieldeffect transistor:6||indium gallium zinc oxide:5||Oxide semiconductor:5||thinfilm transistor (TFT):5||polysilicon:4||Crystallization:4||high performance:4||mobility:4||instability:4||tin monoxide:4||bias stability:4||Low temperature:4||fieldeffect transistors:4||heterojunction:3||oxygen vacancy:3||density functional theory:3||TFT:3||Indium gallium zinc oxide:3||Thinfilm transistors:3||cation composition:3||Logic gates:3||low operation voltage:3||low temperature:3||indium gallium oxide:3||Silicon:3||indium gallium zinc oxide (IGZO):3||Atomic layer deposition:3||IGZO:3||oxygenrelated defect:3||solution process:3||GIDL:3||zinc tin oxide:3||ptype semiconductor:3||zinc tin oxide (ZTO):2||oxide semiconductors:2||Densification:2||ptype oxide semiconductor:2||ptype semiconductors:2||Copper:2||Diffusion barrier:2||highκ dielectric:2||Indium gallium oxide:2||precursor:2||Doping:2||Amorphous indium gallium zinc oxide (aIGZO):2||Amorphous InGaZnO (aIGZO):2||indium gallium tin oxide:2||indium gallium tin oxide (IGTO):2||Indium zinc oxide:2||conversion mechanism:2||Ternary alloy:2||Thin film transistors:2||sputtering:2||stability:2||Aluminum yttrium oxide:2||Encapsulation:2||Thinfilm transistor (TFT):2||density of state:2||diffusion barrier:2||Biosensors:2||Inorganic ptype semiconductor:2||Hydrogen:2||mass density:2||IGO:2||thinfilm transistors(TFTs):2||metal capping:2||aIGZO:2||amorphous indium gallium zinc tin oxide (aIGZTO):2||monolithic 3D integration:2||Atomic layer deposition (ALD):2||Solution process:2||Lowtemperature crystallization:1||Mathematical models:1||Metal Oxide:1||Metal capping:1||Metal oxide:1||Metalinterlayersemiconductor  contact:1||MicroOLED:1||Microcavity effect:1||Mobility:1||Molybdenumtitanium alloy:1||Multilayer:1||Numerical Study:1||Orbital hybridization:1||Oxide:1||Oxide  Thin Film Transistor:1||Ptype inorganic semiconductor:1||Photobias stability:1||Photonic band gap:1||Polymer:1||Polymer dielectric:1||Polysilicon:1||Printed Electronics:1||Printed contacts:1||Random access memory:1||Rapid temperature annealing:1||Residual Organics:1||SONOS devices:1||Scavenging effect:1||Seed  Layer:1||Semiconductor:1||Semiconductor process modeling:1||Sensor phenomena and characterization:1||Si Cluster:1||SiC:1||SiOF:1||Silicon nitride:1||Sintering:1||SnSeO:1||SnO:1||Solgel processes:1||Solution processed dielectric and channel:1||Solutionprocessed TFTs:1||Solutionprocessed indium oxide:1||Sputtering:1||Stability:1||Substrates:1||TCAD simulation:1||Tandem structure:1||Tantalum:1||Tantalum oxide:1||Tellurium:1||Thinfilm NAND flash memory:1||Thinfilm Transistors:1||Thinfilm transistior:1||Topemitting organic light emitting diode:1||Transistors:1||Transition metal oxide:1||Trap distribution:1||VR:1||Zinc oxynitride:1||ZrO₂:1||ZrO₂ gate dielectric:1||amorphous ptype semiconductors:1||annealing temperature:1||antimony doping:1||atomic  layer deposition:1||atomic layerdeposition:1||atomiclayer deposition:1||atomiclayer deposition:1||backendofline transistors:1||backendoflinecompatible transistor:1||bilayer channel:1||bistability:1||bixbyite structure:1||capacitors:1||cation interstitial:1||coloration efficiency:1||complementary metaloxidesemiconductor:1||copper film:1||cosputtering:1||crosslinking structure:1||crystallization:1||cuprous iodide:1||defect mechanism:1||density functionaltheory:1||density of state (DOS):1||device stability:1||doublechannel:1||drain induced barrier lowering:1||encapsulation:1||extendedgate fieldeffect transistors:1||fast currentvoltage (IV):1||fast transient:1||ferroelectric:1||ferroelectric memory:1||fieldeffect mobility:1||flat panel display:1||frequency dispersion:1||hafnium oxide (HfO2):1||heat dissipation:1||heterostructure:1||hexagonal tellurium:1||high mobilities:1||high pressure oxidation:1||highkappa dielectric:1||highpressure atomiclayer deposition:1||hot carrier effect (HCE):1||hybrid dielectric:1||hydrogen:1||hydrogen doping:1||hydrogen effect:1||hydrogendoping:1||hydrogenrelated defects:1||hysteresisfree:1||indium oxide:1||indium zinc oxide:1||indium zinc tin oxide:1||indiumgallium oxide:1||indiumgallium zinc oxide:1||indiumgalliumzinc oxide:1||indiumzinc–tin oxide:1||infrared sensor:1||inorganic ptype semiconductors:1||interdiffusion:1||interfacial traps:1||interstitial oxygen:1||lanthanum doping:1||lanthanum zirconium oxide:1||light stress instability:1||low resistivity:1||lowtemperature process:1||memory devices:1||memory transistor:1||metal induced crystallization:1||metal nanofibers:1||metal oxide:1||metaloxide semiconductors:1||metaloxidesemiconductor:1||ntype semiconductor:1||nanolaminate:1||nanowire electronics:1||organicinorganic hybrid dielectric:1||oxide TFTs:1||oxygen deficiency:1||oxygen vacancy defect:1||ptype inorganic semiconductor:1||ptypethin film transistors:1||pH sensors:1||passivation:1||phototransistor:1||plasmaenhanced atomic layer deposition (PEALD):1||polycrystalline structure:1||porous chromic layer:1||positive bias thermal stress (PBTS) instability:1||positive gate bias temperature stability (PBTS):1||printed electronics:1||printing process:1||pulse IV:1||quantum mechanics:1||realtime detection:1||reliability:1||reverse offset:1||scavenge effect:1||selfaligned:1||selfheat effect:1||silicon dioxide:1||silver nanowires:1||2D materials:1||specific contact resistivity:1||spin cast:1||spinel phase:1||stretchability:1||stretchable transistor:1||subgap density of state (subgap DOS):1||subgap densityofstate (DOS) extraction:1||substitutional hydrogen:1||subthres hold swing:1||surfaceroughness scattering (SR):1||synaptic devices:1||tantalum oxide:1||tellurium:1||tellurium oxide:1||temperature stress:1||thermal instability:1||thermal stability:1||thin film transistor:1||thin film transistors:1||thinfilm  transistor:1||thinfilm transistor:1||threshold voltage (V<sub>TH</sub>):1||top gate:1||transparent conducting oxide:1||transparent electrodes:1||ultraviolet (UV):1||valence band engineering:1||vertical channel NAND flash:1||vertical channel nand flash:1||waveform capture:1||zinc indium oxide:1||zinc oxide:1||zinc oxynitride:1||single pulse:1||2DEG:1||3D nand flash:1||3D NAND:1||3D devices:1||ALD:1||AR:1||Acrylatebased nanocomposite:1||Alumina (Al2O3):1||Ambipolar behavior:1||Amorphous InGaZnO (aIGZO):1||Amorphous indium gallium zinc tin oxide:1||Amorphous indium tin zinc oxide:1||Amorphous indiumgalliumzincoxide (aIGZO):1||Amorphous oxide semiconductor:1||Amorphousindiumgalliumtinoxide (aInGasnO):1||Antimony doping:1||Ash:1||Atomic  Layer  Deposition  (ALD):1||Bendable electronics:1||Bias stress instability:1||Bilayer channel:1||CMOS TFT:1||COP:1||Cadoped Cu:1||Cavitycontrol layer:1||Channel trap density:1||Charge carrier processes:1||Charge pumping:1||Charge trapping:1||Copper Ink:1||Coppercalcium alloy:1||Crystalline  Oxide  Thin  Film:1||Crystals:1||CuCa alloy:1||DUV:1||Dielectric:1||Effective temperature:1||Electrochromic device:1||Electrodes:1||Excess oxygen:1||Fermilevel unpinning:1||Field effect transistors:1||Flexible electronics:1||GaAs:1||Grain size effect:1||HTCVD:1||Hafnium oxide:1||Heterojunction:1||Heterojunction channel:1||Highk dielectric:1||Highk inorganic dielectric:1||Hot carrier injection:1||Hybrid:1||IGTO:1||IP networks:1||IZTO:1||Impurities:1||InGaZnO (IGZO):1||Indium  gallium  zinc  oxide:1||Indium gallium tin oxide (IGTO):1||Indium oxide semiconductors:1||Indium tin oxide:1||Indium zinc oxide(IZO):1||IndiumGalliumZincOxide (IGZO):1||Indiumgalliumtin oxide (IGTO):1||Indiumgalliumzinc oxide (IGZO):1||Indiumzincoxide:1||Iron:1||Laser:1||La₂O₃:1||Leakage currents:1||Li doping:1||Li incorporation:1||Lightassisted erasing:1||Lonepair selectron:1||Low driving voltage:1||Low temperature annealing:1||Low temperature crystallization:1||

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