ScholarWorks@Hanyang University: Park, Jea Gun

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Park, Jea Gun (박재근)

COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)

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Tel 02-2220-0234
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Nonvolatile memory:7||CMP:7||ceria:5||OPV:4||Polymer solar cell:4||selectivity:3||nonvolatile:3||removal rate:3||Chemical mechanical planarization:3||chemicalmechanical planarization:3||SOI:3||ALD:3||colloidal silica:3||CMP slurry:3||TMR ratio:3||STI CMP:3||Polymer:3||contact angle:3||STICMP:3||calcination:3||pMTJ:3||memory:3||Chemical mechanical polishing:2||BEOL:2||P3HT:PCBM:2||TiN liner:2||Nanocrystal:2||strained Si:2||organic lightemitting device:2||ceria slurry:2||superlattice:2||Bistability:2||oxide:2||surfactant concentration:2||gettering:2||halfbias scheme:2||MRAM:2||C:2||Magnetic Tunnel Junction Materials:2||thyristor:2||hydrogen ion implantation:2||Tungsten:2||PVK:2||passivation:2||tungsten:2||C sp:2||Ceria:2||Czochralski method:2||Silicon solar cells:2||FWHM:2||polysilicon:2||Xray photoelectron spectra:2||Photovoltaic:2||crosspoint memory:2||OLED:2||agglomeration:2||Ruthenium:2||relaxed SiGe:2||SGOI:2||Organic solar cell:2||Gettering:2||microstructure:2||Substrate Heating:2||Fenton reaction:2||electron mobility:2||multilayered ceramic capacitors (MLCCs):2||nanocrystal:2||Liq:2||Selectivity:2||slurries:2||slurry:2||Electron injection:1||Endurance:1||Endurance cycle:1||Epitaxial growth:1||Etch:1||Etch Characteristics:1||Failure:1||Fe nanocrystal:1||Fe(NO3)(3):1||Ferrous catalyst:1||Flexible weibull extension distribution:1||Fullerene derivatives:1||Gate dielectric:1||Ge:1||Ge concentration:1||Ge condensation:1||GeST:1||Geoninsulator:1||GeS2:1||Gecondensation:1||Germanium film (Gefilm):1||H2:1||H2O2:1||HF VPD:1||HYDROGENPEROXIDE:1||Haze:1||Heating:1||HfAlO:1||Highk:1||Hole &:1||Hole mobility:1||Hydrogen ion implantation:1||IGZO:1||IGZO TFT:1||Impurities:1||Impurities in crystals:1||InGaAs:1||Initial step height:1||Interface perpendicular magnetic anisotropy:1||Interface property:1||Intermittent strip:1||Ion implantation:1||Isolated SiO2film:1||KINETICS:1||LCD:1||LDO:1||Laplace:1||LiF:1||Lightharvesting:1||Line Regulation:1||Load Regulation:1||Localizedsurface plasmon resonance:1||MOSFET:1||MTJ:1||Memory:1||Mndoped quantum dots:1||Monocrystalline silicon:1||Morphology:1||Multilevel:1||Multiwavelength:1||NAND FLASH:1||NBIS:1||NH3:1||NHPP:1||Nanagenerator:1||NanoSOI:1||Nanocrystal:1||Nanocrystals:1||Nanoscale device:1||Nanowire:1||Ni:1||Ni nanocrystal:1||NiO:1||Nitrogen:1||NonGlobalWarming Gas:1||Nonionic surfactant:1||Nonvolatile:1||Organic contamination:1||Organic photovoltaics:1||Organic thinfilm transistors:1||Oxidation:1||Oxidizer:1||Oxygen plasma:1||P3HT: PCBM:1||PBD:1||PCM:1||PEDOT:PSS:1||PL:1||POLY(ACRYLIC ACID):1||Particles:1||Perovskite quantum dots:1||Photocatalyst:1||Photoconductivity:1||Photodegradation:1||Photovoltaic cell:1||Photovoltaics:1||Physical structure:1||Plasma Etching:1||Plasma passivation:1||Point defects:1||Poly Isolation CMP:1||Poly Si:1||Poly(acrylamide):1||Polyacrylamide:1||Polymer solar cells:1||Polyvinylcarbazole (PVK):1||Polyvinylpyrrolidone:1||Power conversion efficiency:1||Powerconversion efficiency:1||Pt diffusion:1||Pt seed:1||Pulse:1||Pulse Biased lop:1||Quantum dot enhancement film:1||Quantum yield:1||RF Pulsed ICP:1||RTA:1||Raman:1||Random access memory:1||Recess channel:1||Reference Source:1||Reflectance:1||Relaxed SiGe:1||Roughness:1||SIMS:1||SON:1||SYSTEM:1||Schottky contact:1||Selective Etching:1||Selector:1||Selfpowered:1||Selfstopping:1||Semiconducting silicon:1||Semiconductor:1||Sequential 3D technology:1||Settling Time:1||Si doped:1||Si3N4 film:1||SiGe:1||SiO2:1||Silicon:1||Silicon nitride:1||Silicon single crystal ingot:1||Silicon solar cell:1||Silver nanoparticles:1||Single crystal growth:1||Slurry:1||Small molecule:1||Smallmolecular:1||Smallmolecule:1||Smallmolecule organic:1||Solar industry:1||Solutionprocessing:1||Spin electronics:1||Spintransfer torque magnetic random access memory:1||Stability:1||Strain:1||Strainrelaxed SiGe:1||Strained Si:1||Superlinearthreshold switching:1||TFT:1||Ta diffusion:1||Tantalum:1||Temperature profile:1||Textile substrate:1||Texture:1||Thermal conductivity:1||TiO2:1||Top and bottom free layer:1||Trapping:1||Triboelectric effect:1||Triiodide:1||UHVCVD:1||UHVCVD:1||UV sensor:1||Wafer polishing:1||Warp/bow:1||Weibull extension distribution:1||Wide color gamut:1||Zeta potential:1||ZnO:1||ZnS QDs:1||ZrO2abrasive:1||abrasives:1||aging:1||alkaline agent:1||alpha &:1||annihilation process:1||aqueous processing:1||artificial neuron:1||artificial synapse:1||artificial synaptic device:1||barium titanate:1||bending:1||betaBi2O3:1||bistable resistances:1||bistability:1||boron diffusion barrier:1||boron/oxygen impurity concentration:1||bridging layer:1||capacitancevoltage (CV):1||capacitorless memory:1||catalyst:1||cell separation:1||cellulosic polymers:1||chalcogenide:1||charge plasma:1||charge pump:1||chemical mechanical planarization:1||chemical mechanical polishing:1||chemical reactions:1||chemicalmechanicalplanarization:1||circulating tumor cell:1||colloids:1||compressive strained SiGe:1||conductivebridging:1||conjugated polymers:1||corrosion:1||corrosion inhibitor:1||coupling ability:1||crystalline structure:1||crystallinity:1||current density:1||current reduction:1||dark current:1||deep neural networks:1||defect:1||density:1||dielectric properties:1||dielectric strength:1||dislocation:1||dissolution:1||dual emission:1||efficiency:1||electrokinetic effects:1||elemental semiconductors:1||endurance:1||energydownshift:1||etchstop:1||exchange field:1||exciton blocking:1||ferric catalyst:1||ferricionic catalyst:1||flexible memory:1||floating diffusion amplifier:1||fluorene:1||free organic additives:1||gate dielectric film:1||germanium compounds:1||hardmask:1||heat treatment:1||hydrogen compounds:1||hydrolysis reaction accelerator:1||in situ steam generated oxide:1||integrateandfire:1||interface layer:1||interface properties:1||interface property:1||interfacial phase change memory:1||interfacial phasechange memory:1||jarshaped conductive Cu filaments:1||large particle:1||leakage:1||leakage current:1||lifetime:1||light point defect:1||lithium:1||lithium ion battery:1||magnetic random access memory:1||magnetic random access memory (MRAM):1||magnetic tunnel junction (MTJ):1||magnetic tunnle junctions:1||magnetictunneljunction:1||memory devices:1||memristor arrays:1||metal anode:1||metal cathode:1||metallic impurity contamination:1||micro scratch:1||microfluidics:1||milling:1||molecular ion implantation:1||multilayer film:1||nanocrystals:1||nanotopography:1||nanowires:1||natural graphite:1||neuromorphic:1||neuromorphic computing:1||neuromorphic devices:1||nitride film:1||nitrogen profile:1||nonPrestonian:1||organic:1||organic compounds:1||organic memory:1||organic photovoltaics:1||oxide film:1||oxygen ion movement:1||oxygenated amorphous carbon:1||pSTT MTJ:1||pSTT neuron:1||ptype characteristics:1||particle size:1||particle size distribution:1||perpendicularspintransfertorquemagneticrandomaccessmemory:1||phase change memory:1||phasechange memory:1||phasechange randomaccess memory:1||polishing:1||polymer:1||polymer memory:1||polymer nonvolatile:1||polymer photovoltaic cell:1||post RTA:1||postRTA:1||power consumption:1||power conversion efficiency:1||processing in memory (PIM):1||protonated phosphiteion:1||proximity gettering technique:1||quantum dots:1||randomaccess storage:1||rapid thermal annealing:1||reactive ion beam etching (RIBE):1||remote plasma nitridation:1||resistive randomaccess memories:1||resistive switching:1||retention time:1||roughness:1||sSOI:1||scavenger:1||selective sedimentation:1||selfreabsorption:1||shallow trench isolation:1||silicon:1||silicon compounds:1||silicon membrane:1||silicon wafer (Si wafer):1||silicononinsulator:1||silvaco atlas:1||site flatness:1||sol–gel process:1||solar cells:1||spiking neural network:1||spiking neuron:1||spin transfer torque:1||spinoncarbon (SOC):1||spintransfer torque magnetic randomaccess memory:1||stability:1||strainedSi:1||stress:1||superlinear threshold switching:1||surface structure:1||surface tension:1||surfactant molecular weight:1||swelling behavior:1||synthetic quartz powder:1||syntheticantiferromagnetic:1||thermal stability:1||thin films:1||timetobreakdown:1||topography:1||transparent singlecrystal silicon:1||triethanolamine (TEA):1||tunnel fieldeffect transistor:1||tunneling magnetoresistance ratio:1||ultra high molecular weight polyethylene (UHMWPE):1||ultrahigh purity:1||void:1||wafer polishing process:1||xray photoelectron spectroscopy (XPS):1||(2) covalent bonds:1||yttrium coated BaTiO3:1||(3) covalent bonds:1||3D crosspoint array:1||3D crosspoint nonvolatile memories:1||3D heterogeneous packaging:1||AQUEOUSSOLUTION:1||Absorption properties:1||Acceptor layer:1||Adhesion Force:1||Ag filament:1||AgGaS2xSexbased QD:1||Al2O3:1||Alq3:1||Ammonium fluorosilicate:1||Annihilating threading dislocation:1||Au:1||Au nanocrystal:1||B diffusion:1||BAlq:1||BT 2020:1||BaTiO3:1||Benzothiadiazole:1||Bias frequency:1||Bipolar switching:1||Bisolvent:1||CC bond breakage:1||CBRAM:1||CF3I:1||CH3OH Gas:1||CH4/N2O Gas Mixture:1||CMOS image sensor:1||CMOS image sensors (CIS):1||COMPLEXES:1||CVD Chamber:1||Catalyst:1||Cavities:1||CdZnS/ZnS QDs:1||Ceria abrasive size:1||Charge size:1||Chemicalmechanical planarization:1||Chemicalmechanical planarization (CMP):1||CoFeB/MgO:1||CoNi₂S₄:1||Colloidal synthesis:1||Colloidal zirconia:1||Color gamut:1||Compressivelystrained SiGe:1||Computer simulation of liquid structure:1||Conductivebridge:1||Conductivebridging memory:1||Counter electrode:1||Crystalline structure:1||Cufilm CMP:1||CuGaS2:1||Curing:1||DEGRADATION:1||DLTS:1||DSSCs:1||Decomposition:1||Defect:1||Defects:1||Diffusion:1||Diffusion barrier:1||Dishing:1||Dislocation sink:1||Dominant carrier:1||Donor layer:1||Downconversion:1||Electroless etching:1||Electrocatalysis:1||Electron blocking:1||

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