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Showing results 1 to 2 of 2
Solid phase epitaxy of amorphous Si films by suppression of surface SiO2 layer formation using heating-up under Si2H6 gas environment
Choe, TH; Kim, SJ; Choi, W; Kim, HJ
Article
Issue Date
1997
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S302 - S306
Publisher
KOREAN PHYSICAL SOC
Suppression of surface SiO2 layer and solid phase epitaxy of amorphously deposited Si films using heating-up under Si2H6 environment
Choe, TH; Kim, SJ; Choi, W; Kim, HJ
Article
Issue Date
1997
Citation
CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, v.448, pp.345 - 350
Publisher
MATERIALS RESEARCH SOCIETY
1
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