AlGaN/GaN Schottky-Gate HEMTs With UV/O-3-Treated Gate Interface
DC Field | Value | Language |
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dc.contributor.author | Kim, Kwangeun | - |
dc.contributor.author | Kim, Tong June | - |
dc.contributor.author | Zhang, Huilong | - |
dc.contributor.author | Liu, Dong | - |
dc.contributor.author | Jung, Yei Hwan | - |
dc.contributor.author | Gong, Jiarui | - |
dc.contributor.author | Ma, Zhenqiang | - |
dc.date.available | 2021-03-17T06:49:36Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2020-10 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11528 | - |
dc.description.abstract | The surface condition under gate of AlGaN/GaN heterostructure plays a critical role in high-electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O-3) treatment applied to Al-0.3 Ga-0.7 N/GaN heterostructure on the electrical performance of AlGaN/GaN Schottky-gate HEMT were investigated. The reverse-bias leakage current of Schottky diode was reduced by three orders after the treatment. X-ray photoelectron spectroscopy confirms the formation of the Ga2Ox layer which serves as an interface passivation layer and thus suppresses trap-assisted electron tunneling. Capacitance-voltage measurements of AlGaN/GaN HEMT show shifts of threshold and on-set voltages, indicating decreased surface states as a result of the treatment. The electrical characteristics of AlGaN/GaN HEMT exhibit improved transconductance and subthreshold swing values after the treatment. | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | AlGaN/GaN Schottky-Gate HEMTs With UV/O-3-Treated Gate Interface | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Kwangeun | - |
dc.identifier.doi | 10.1109/LED.2020.3019339 | - |
dc.identifier.scopusid | 2-s2.0-85092369867 | - |
dc.identifier.wosid | 000573814300008 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.41, no.10, pp.1488 - 1491 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 41 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1488 | - |
dc.citation.endPage | 1491 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | LEAKAGE | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordAuthor | AlGaN/GaN | - |
dc.subject.keywordAuthor | Schottky HEMT | - |
dc.subject.keywordAuthor | UV/O-3 | - |
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