Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM
DC Field | Value | Language |
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dc.contributor.author | Ha, Seunghyun | - |
dc.contributor.author | Lee, Hyunjae | - |
dc.contributor.author | Lee, Won-Yong | - |
dc.contributor.author | Jang, Bongho | - |
dc.contributor.author | Kwon, Hyuk-Jun | - |
dc.contributor.author | Kim, Kwangeun | - |
dc.contributor.author | Jang, Jaewon | - |
dc.date.available | 2020-07-10T02:40:56Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/1163 | - |
dc.description.abstract | We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N-2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 10(4) s without any significant degradation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | RESISTANCE | - |
dc.subject | FILM | - |
dc.title | Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Kwangeun | - |
dc.identifier.doi | 10.3390/electronics8090947 | - |
dc.identifier.scopusid | 2-s2.0-85071983286 | - |
dc.identifier.wosid | 000489128400034 | - |
dc.identifier.bibliographicCitation | ELECTRONICS, v.8, no.9 | - |
dc.relation.isPartOf | ELECTRONICS | - |
dc.citation.title | ELECTRONICS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordAuthor | sol-gel | - |
dc.subject.keywordAuthor | ZrO2 | - |
dc.subject.keywordAuthor | resistive random-access memory | - |
dc.subject.keywordAuthor | annealing environment | - |
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