Metal-Al2O3-GaN capacitors with an ultraviolet/ozone plasma-treated interface
DC Field | Value | Language |
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dc.contributor.author | Kim, Kwangeun | - |
dc.contributor.author | Kim, Jisoo | - |
dc.contributor.author | Gong, Jiarui | - |
dc.contributor.author | Liu, Dong | - |
dc.contributor.author | Ma, Zhenqiang | - |
dc.date.available | 2021-03-17T06:54:38Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2020-03-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11781 | - |
dc.description.abstract | In this study, interface quality of p-type GaN metal-oxide-semiconductor capacitors (n-MOSCAPs) improved with the interface oxide layer (Ga2Ox) formed by ultraviolet/ozone (UV/O-3) treatment. X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray dispersive spectroscopy were employed to investigate the Ga2Ox interface layer which reduced trapped charge density (Q(ot)) and interface trap density (D-it) of n-MOSCAPs. The thickness of the Ga2Ox layer was found to be similar to 1 nm. From the frequency-dispersion capacitance-voltage measurements, the Q(ot) averaged over the GaN bandgap decreased from 9.40 x 10(11) to 7.77 x 10(11) cm(-2) eV(-1) and the D-it near the valence band edge decreased from 9.78 x 10(12) to 6.27 x 10(12) cm(-2) eV(-1). The method to improve the interface quality could be applied to enhancement in the performance of p-GaN electronic devices such as MOS field-effect transistors and high-electron mobility transistors. | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Metal-Al2O3-GaN capacitors with an ultraviolet/ozone plasma-treated interface | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Kwangeun | - |
dc.identifier.wosid | 000521189400001 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.59, no.3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 59 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | PRETREATMENT | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordAuthor | interface state | - |
dc.subject.keywordAuthor | ultraviolet | - |
dc.subject.keywordAuthor | ozone treatment | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Ga2Ox | - |
dc.subject.keywordAuthor | metal-oxide-semiconductor capacitor | - |
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