Spin hall effect-based nonvolatile flip flop for fine-grained power gating
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Konwoo | - |
dc.contributor.author | K.-W. | - |
dc.date.available | 2021-03-17T08:01:34Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 2287-5255 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/12822 | - |
dc.description.abstract | This paper presents a nonvolatile flip flop (NVFF) for fine-grained power gating with data retention. The proposed NVFF exploits the spin Hall effect (SHE) for low-power and high-speed data backup operations. In order to evaluate the performance of the proposed NVFF, a simulation framework was used that consists of a SPICE circuit simulator and a Landau-Lifshitz-Gilbert solver. This work investigates the effect of process variation on the backup-and-restore operations, and shows that the proposed NVFF can achieve <5ns backup and <2ns restore operations even under process variations in the transistor and spin Hall device. Compared to the conventional spin transfer torque-based NVFF, the proposed NVFF improves the break-even time by more than three times because of the high spin injection efficiency of SHE and the simple single-phase backup mechanism. © 2019 The Institute of Electronics and Information Engineers. | - |
dc.publisher | Institute of Electronics Engineers of Korea | - |
dc.title | Spin hall effect-based nonvolatile flip flop for fine-grained power gating | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Konwoo | - |
dc.identifier.doi | 10.5573/IEIESPC.2019.8.5.415 | - |
dc.identifier.scopusid | 2-s2.0-85087446898 | - |
dc.identifier.bibliographicCitation | IEIE Transactions on Smart Processing and Computing, v.8, no.5, pp.415 - 422 | - |
dc.relation.isPartOf | IEIE Transactions on Smart Processing and Computing | - |
dc.citation.title | IEIE Transactions on Smart Processing and Computing | - |
dc.citation.volume | 8 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 415 | - |
dc.citation.endPage | 422 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Magnetic tunnel junction | - |
dc.subject.keywordAuthor | Nonvolatile flip flop | - |
dc.subject.keywordAuthor | Power gating | - |
dc.subject.keywordAuthor | Spin hall effect | - |
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