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Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Seo | - |
| dc.contributor.author | S. | - |
| dc.contributor.author | Park, Byoungnam | - |
| dc.contributor.author | B. | - |
| dc.contributor.author | Kim, Youngjun | - |
| dc.contributor.author | Y. | - |
| dc.contributor.author | Lee | - |
| dc.contributor.author | H.U. | - |
| dc.contributor.author | Kim | - |
| dc.contributor.author | H. | - |
| dc.contributor.author | Lee | - |
| dc.contributor.author | S.Y. | - |
| dc.contributor.author | Kim | - |
| dc.contributor.author | Y. | - |
| dc.contributor.author | Won | - |
| dc.contributor.author | J. | - |
| dc.contributor.author | Kim | - |
| dc.contributor.author | Y.J. | - |
| dc.contributor.author | Lee | - |
| dc.contributor.author | J. | - |
| dc.date.available | 2021-03-17T08:43:17Z | - |
| dc.date.created | 2021-02-26 | - |
| dc.date.issued | 2018 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13051 | - |
| dc.title | Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Park, Byoungnam | - |
| dc.identifier.doi | 10.1016/j.apsusc.2018.04.158 | - |
| dc.identifier.scopusid | 2-s2.0-85046041548 | - |
| dc.identifier.bibliographicCitation | Applied Surface Science, v.448, pp.576 - 582 | - |
| dc.relation.isPartOf | Applied Surface Science | - |
| dc.citation.title | Applied Surface Science | - |
| dc.citation.volume | 448 | - |
| dc.citation.startPage | 576 | - |
| dc.citation.endPage | 582 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- Park, Byoung Nam
- Engineering (Advanced Materials)