Microsecond crystallization of amorphous silicon films on glass substrates by joule heating
DC Field | Value | Language |
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dc.contributor.author | Hong | - |
dc.contributor.author | W.-E. | - |
dc.contributor.author | Ro, Jae-sang | - |
dc.contributor.author | J.-S. | - |
dc.date.available | 2021-03-17T09:45:26Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13463 | - |
dc.description.abstract | Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. We devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. JIC-processed poly-Si thin-film transistors were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs. | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Microsecond crystallization of amorphous silicon films on glass substrates by joule heating | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, Jae-sang | - |
dc.identifier.doi | 10.1149/07510.0027ecst | - |
dc.identifier.scopusid | 2-s2.0-84991627542 | - |
dc.identifier.wosid | 000406512700003 | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.75, no.10, pp.27 - 35 | - |
dc.relation.isPartOf | ECS Transactions | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 75 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 27 | - |
dc.citation.endPage | 35 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | EXCIMER-LASER-CRYSTALLIZATION | - |
dc.subject.keywordPlus | SOLID-PHASE CRYSTALLIZATION | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
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