Effects of molecular weights of a polymeric insulator on the electrical properties of pentacene thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Zhang, Xue | - |
dc.contributor.author | Park, Gyeong-Tae | - |
dc.contributor.author | Choi, Jong Sun | - |
dc.contributor.author | Kwon, Jin-Hyuk | - |
dc.contributor.author | Bae, Jin-Hyuk | - |
dc.contributor.author | Park, Jaehoon | - |
dc.date.accessioned | 2021-11-11T02:45:08Z | - |
dc.date.available | 2021-11-11T02:45:08Z | - |
dc.date.created | 2021-10-25 | - |
dc.date.issued | 2014-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16746 | - |
dc.description.abstract | This paper reports the effects of the molecular weights (MWs) of a polymeric insulator on the electrical properties of a pentacene thin-film transistor. The MWs of polystyrene used as a polymeric insulator were varied from 13,000 to 980,000. The mobility and current on/off ratio in a pentacene thin-film transistor were improved considerably (more than twofold and by a factor of 2, respectively) with increasing MW of polystyrene. In addition, the magnitude of the subthreshold slope was reduced significantly. Both the thickness and dielectric constant remained the same regardless of the MWs of polystyrene. The improved electrical properties could be explained because the higher MW of polystyrene results in the pentacene film with enhanced grain and crystalline intensity. This suggests that a higher MW is important for obtaining better electrical characteristics in organic transistors with polymeric insulators. (C) 2014 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | CARRIER MOBILITY | - |
dc.subject | PERFORMANCE | - |
dc.subject | ORIENTATION | - |
dc.subject | DEPOSITION | - |
dc.subject | CRYSTALS | - |
dc.subject | LAYER | - |
dc.title | Effects of molecular weights of a polymeric insulator on the electrical properties of pentacene thin-film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong Sun | - |
dc.identifier.doi | 10.7567/JJAP.53.031601 | - |
dc.identifier.scopusid | 2-s2.0-84903218159 | - |
dc.identifier.wosid | 000336118300019 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CARRIER MOBILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | LAYER | - |
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