Soluble N-Type organic thin-film transistors with enhanced electrical characteristics
DC Field | Value | Language |
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dc.contributor.author | Lee, Ho Won | - |
dc.contributor.author | Lee, Seok Jae | - |
dc.contributor.author | Koo, Ja Ryong | - |
dc.contributor.author | Cho, Eou Sik | - |
dc.contributor.author | Kwon, Sang Jik | - |
dc.contributor.author | Kim, Woo Young | - |
dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Kim, Young Kwan | - |
dc.date.accessioned | 2021-11-11T03:43:33Z | - |
dc.date.available | 2021-11-11T03:43:33Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17013 | - |
dc.description.abstract | We fabricated and investigated soluble, organic, thin-film transistors (OTFTs) containing '[6, 6]-phenyl-C61-butyric acid methyl ester (PCBM)' as a semiconducting layer, and an organic dielectric buffer (cross-linked poly-4-vinylphenol) as a dielectric buffer-layer to improve electrical characteristics. The semiconducting layer of the devices was fabricated by the drop-casting method where PCBM was dissolved in three different solvents (odichlorobenzene, chloroform, and chlorobenzene). From the transfer and output characteristics of the PCBM OTFTs, a threshold voltage of 10 V, sub-threshold slope of 10 V/dec, on/off current ratio of 7.305 x 10(3), and field-effect mobility of 1.53 x 10(-2) cm(2)/Vs were obtained; for PCBM using o-dichlorobenzene solvent and an organic dielectric buffer layer. It was also found that the hysteresis for the same device was improved conspicuously compared to the other devices, by the above-mentioned condition. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | BIAS STRESS | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | ELECTRONICS | - |
dc.subject | DISPLAYS | - |
dc.title | Soluble N-Type organic thin-film transistors with enhanced electrical characteristics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Kwan | - |
dc.identifier.doi | 10.1007/s13391-013-6031-5 | - |
dc.identifier.scopusid | 2-s2.0-84887946068 | - |
dc.identifier.wosid | 000327126500036 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.9, no.6, pp.865 - 869 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 865 | - |
dc.citation.endPage | 869 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001818948 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | BIAS STRESS | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordAuthor | OTFT | - |
dc.subject.keywordAuthor | PCBM | - |
dc.subject.keywordAuthor | c-PVP organic buffer layer | - |
dc.subject.keywordAuthor | drop-casting | - |
dc.subject.keywordAuthor | hysteresis | - |
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