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Soluble N-Type organic thin-film transistors with enhanced electrical characteristics

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dc.contributor.authorLee, Ho Won-
dc.contributor.authorLee, Seok Jae-
dc.contributor.authorKoo, Ja Ryong-
dc.contributor.authorCho, Eou Sik-
dc.contributor.authorKwon, Sang Jik-
dc.contributor.authorKim, Woo Young-
dc.contributor.authorPark, Jaehoon-
dc.contributor.authorKim, Young Kwan-
dc.date.accessioned2021-11-11T03:43:33Z-
dc.date.available2021-11-11T03:43:33Z-
dc.date.created2021-11-10-
dc.date.issued2013-11-
dc.identifier.issn1738-8090-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17013-
dc.description.abstractWe fabricated and investigated soluble, organic, thin-film transistors (OTFTs) containing '[6, 6]-phenyl-C61-butyric acid methyl ester (PCBM)' as a semiconducting layer, and an organic dielectric buffer (cross-linked poly-4-vinylphenol) as a dielectric buffer-layer to improve electrical characteristics. The semiconducting layer of the devices was fabricated by the drop-casting method where PCBM was dissolved in three different solvents (odichlorobenzene, chloroform, and chlorobenzene). From the transfer and output characteristics of the PCBM OTFTs, a threshold voltage of 10 V, sub-threshold slope of 10 V/dec, on/off current ratio of 7.305 x 10(3), and field-effect mobility of 1.53 x 10(-2) cm(2)/Vs were obtained; for PCBM using o-dichlorobenzene solvent and an organic dielectric buffer layer. It was also found that the hysteresis for the same device was improved conspicuously compared to the other devices, by the above-mentioned condition.-
dc.language영어-
dc.language.isoen-
dc.publisherKOREAN INST METALS MATERIALS-
dc.subjectBIAS STRESS-
dc.subjectCRYSTALLIZATION-
dc.subjectELECTRONICS-
dc.subjectDISPLAYS-
dc.titleSoluble N-Type organic thin-film transistors with enhanced electrical characteristics-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Young Kwan-
dc.identifier.doi10.1007/s13391-013-6031-5-
dc.identifier.scopusid2-s2.0-84887946068-
dc.identifier.wosid000327126500036-
dc.identifier.bibliographicCitationELECTRONIC MATERIALS LETTERS, v.9, no.6, pp.865 - 869-
dc.relation.isPartOfELECTRONIC MATERIALS LETTERS-
dc.citation.titleELECTRONIC MATERIALS LETTERS-
dc.citation.volume9-
dc.citation.number6-
dc.citation.startPage865-
dc.citation.endPage869-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001818948-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusBIAS STRESS-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusDISPLAYS-
dc.subject.keywordAuthorOTFT-
dc.subject.keywordAuthorPCBM-
dc.subject.keywordAuthorc-PVP organic buffer layer-
dc.subject.keywordAuthordrop-casting-
dc.subject.keywordAuthorhysteresis-
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