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Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung, Gun Woo | - |
| dc.contributor.author | Wang, Jian-Xun | - |
| dc.contributor.author | Li, Zhao-Hui | - |
| dc.contributor.author | Koo, Ja-Ryong | - |
| dc.contributor.author | Kwon, Sang Jik | - |
| dc.contributor.author | Cho, Eou-Sik | - |
| dc.contributor.author | Kim, Young Kwan | - |
| dc.date.accessioned | 2021-11-11T04:41:22Z | - |
| dc.date.available | 2021-11-11T04:41:22Z | - |
| dc.date.created | 2021-11-10 | - |
| dc.date.issued | 2013-06 | - |
| dc.identifier.issn | 1533-4880 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17118 | - |
| dc.description.abstract | We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with cross-linked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 Omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum similar to 5.8 cm(2)/Vs) and on/off current ratios of similar to 10(6). | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
| dc.subject | ZINC-OXIDE | - |
| dc.subject | PERFORMANCE | - |
| dc.subject | FABRICATION | - |
| dc.title | Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Young Kwan | - |
| dc.identifier.doi | 10.1166/jnn.2013.7029 | - |
| dc.identifier.scopusid | 2-s2.0-84878718335 | - |
| dc.identifier.wosid | 000320205400043 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.6, pp.4052 - 4055 | - |
| dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.volume | 13 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 4052 | - |
| dc.citation.endPage | 4055 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | ZINC-OXIDE | - |
| dc.subject.keywordPlus | PERFORMANCE | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordAuthor | Amorphous InGaZnO Transistor | - |
| dc.subject.keywordAuthor | Polymeric Gate Dielectric Layer | - |
| dc.subject.keywordAuthor | Flexible Substrate | - |
| dc.subject.keywordAuthor | Semi-Transparent | - |
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Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)