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Synthesis and characterization of benzo[b]thieno[2,3-d]thiophene (BTT) derivatives as solution-processable organic semiconductors for organic field-effect transistors

Authors
Lee, YongchulRyu, SoominChoi, EunjinHo, DongilEarmme, TaeshikKim, ChoongikSeo, SungYong
Issue Date
Dec-2021
Publisher
ELSEVIER SCIENCE SA
Keywords
Organic field-effect transistor; Organic semiconductors; Solution-process; Charge carrier mobility; Benzo[b]thieno[2,3-d]thiophene
Citation
SYNTHETIC METALS, v.282, pp.116944
Journal Title
SYNTHETIC METALS
Volume
282
Start Page
116944
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/18089
DOI
10.1016/j.synthmet.2021.116944
ISSN
0379-6779
Abstract
In this study, novel benzo[b]thieno[2,3-d]thiophene (BTT) derivatives, 2-(thiophene-2-yl)benzo[b]thieno[2,3-d] thiophene (compound 1), 2-(5-(2-ethylhexyl)thiophene-2-yl)benzo[b]thieno[2,3-d]thiohpene (compound 2), and 2-(5-octylthiophene-2-yl)benzo[b]theino[2,3-d]thiohpene (compound 3), were synthesized and characterized as solution-processable organic semiconductors (OSCs) for organic field-effect transistors (OFETs). Developed organic compounds were analyzed by thermogravimetric analysis (TGA), differential scanning calorimeter (DSC), UV-vis spectroscopy, and cyclic voltammetry for physicochemical characteristics. All BTT-derivatives were coated by solution-shearing method and fabricated films were characterized by atomic force microscopy (AFM) and 0-20 X-ray diffraction (XRD). To investigate the electrical performance of newly synthesized BTT-derivatives, bottom-gate/top-contact OFETs were fabricated and characterized in ambient conditions. All compounds exhibited p-channel activity and especially, the resulting OFETs based on films of compound 3 showed the highest hole mobility of 0.11 cm(2)/Vs and current on/off ratio of 8.7 x 10(6).
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