Thermoelectric Thin Film Device of Cross-Plane Configuration Processed by Electrodeposition and Flip-Chip Bonding
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Min-Young | - |
dc.contributor.author | Oh, Tae-Sung | - |
dc.date.accessioned | 2021-12-02T07:40:24Z | - |
dc.date.available | 2021-12-02T07:40:24Z | - |
dc.date.created | 2021-11-29 | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 1345-9678 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19764 | - |
dc.description.abstract | Using electrodeposition and flip-chip bonding, a cross-plane thin film device consisting of 242 pairs of the electrodeposited n-type Bi-Te and p-type Sb-Te thin film legs was successfully fabricated. The electrodeposited Bi-Te films with the thickness of 2.5-20.2 mu m exhibited the Seebeck coefficients of -52 to -59 mu V/K and the power factors of 5.5-5.1 x 10(-4)W/m.K-2. While the Seebeck coefficient of the Sb-Te film varied from 276 to 485 mu V/K, the power factor was changed from 81 x 10(-4) to 50 x 10(-4)W/m.K-2 with increasing the film thickness from 2.2 to 20.5 mu m. The internal resistance of the thin film device consisting of 242 pairs of the electrodeposited n-p thin film legs was measured as 3.7K Omega. The open-circuit voltage and the maximum output power of the thin film device were 0.294 V and 5.9 mu W, respectively, with the temperature difference of 22.3K across the hot and cold ends of the thin film device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | JAPAN INST METALS | - |
dc.subject | DEPOSITION | - |
dc.subject | GENERATORS | - |
dc.subject | DESIGN | - |
dc.subject | BI2TE3 | - |
dc.title | Thermoelectric Thin Film Device of Cross-Plane Configuration Processed by Electrodeposition and Flip-Chip Bonding | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Tae-Sung | - |
dc.identifier.doi | 10.2320/matertrans.M2012265 | - |
dc.identifier.scopusid | 2-s2.0-84870669376 | - |
dc.identifier.wosid | 000325697300015 | - |
dc.identifier.bibliographicCitation | MATERIALS TRANSACTIONS, v.53, no.12, pp.2160 - 2165 | - |
dc.relation.isPartOf | MATERIALS TRANSACTIONS | - |
dc.citation.title | MATERIALS TRANSACTIONS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 2160 | - |
dc.citation.endPage | 2165 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | GENERATORS | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordAuthor | thermoelectric device | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | bismuth telluride | - |
dc.subject.keywordAuthor | antimony telluride | - |
dc.subject.keywordAuthor | electrodeposition | - |
dc.subject.keywordAuthor | flip chip | - |
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